Press Release Summary:
AvailableÂ in 25 x 9.6 mm, 10-lead, metal/ceramic flanged package (CMPA1D1E025F) or asÂ bare die (CMPA1D1E030D), 50 Ω Ku-Band MMIC (monolithic microwave integrated circuit) high power amplifier (HPA) covers 13.5–14.75 GHz band and operates at 40 V VDD. This 30 W GaN MMIC 2-stage HPA delivers satcom measured performance of 20 dB linear gain at 42 dBm average output power while maintaining linearity under -33dBc OQPSK signal and with adjacent channel power atÂ drain efficiency of 20%.
Original Press Release:
Cree Releases Breakthrough Power Ku-Band MMIC HPA
Cree, Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has released the highest power Ku-Band MMIC available on the market. Covering the 13.5 – 14.75GHz commercial satcom band, the new 30W GaN MMIC two-stage high power amplifier (HPA) will allow the satcom industry to achieve higher power, more efficient Ku-Band solutions than the incumbent TWT or GaAs solutions utilized today.
Available in a compact (25mm x 9.6mm), 10-lead, metal/ceramic flanged package (CMPA1D1E025F), or as a bare die (CMPA1D1E030D), the 50Ω Ku-Band MMIC HPA operates at 40V VDD, and delivers satcom measured performance of 20dB linear gain at 42dBm average output power, while maintaining linearity under the -33dBc OQPSK signal, and with adjacent channel power at a drain efficiency of 20%. The new 30W GaN MMIC HPA also delivers higher breakdown voltage, power density, and thermal conductivity than comparable Si, GaAs, or GaN-on-Si transistors, in addition to wider bandwidth performance.
“Cree’s new Ku-Band GaN MMIC HPA was specifically designed in response to customer requests for higher power and higher efficiency Ku-Band amplifier solutions. Delivering higher power, gain, and efficiency at an affordable price point, this amplifier will set the new standard for Ku-Band performance,” said Tom Dekker, director of sales and marketing, Cree RF.
The new 30W Ku-Band GaN MMIC will be one of the many Cree® products on display at the 2015 International Microwave Symposium (IMS), which will take place May 17–21 in Phoenix, Ariz., and will be stocked at Digi-Key and Mouser by mid-summer 2015.
For more information about Cree’s new highly efficient 30W GaN MMIC HPA for Ku-Band applications, please visit the embedded links above to access the product datasheets, which include detailed information about typical performance, absolute maximum ratings, electrical characteristics, and product dimensions, amongst other metrics. Additionally, IMS attendees can learn more by visiting Cree at Booth #2636.
To schedule an appointment with Cree at IMS, please contact Christine Stieglitz at firstname.lastname@example.org or 919-872-8172. For all other inquiries about Cree RF products and foundry services, please visit www.cree.com/RF or contact Sarah Miller, Marketing, Cree RF Components, at email@example.com or 919-407-5302.
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