PIN Diode Switch Element suits HF, VHF, and UHF applications.

Press Release Summary:



Offered in integrated, nonmagnetic, 2.03 x 1.27 mm, wafer-scale format, RoHS-compliant MPS2R10-606 is optimized for high-power transmit/receive (T/R) switching. This monolithic microwave surface mount (MMSM) series-shunt SP2T PIN diode reflective switch covers 100 MHz to 1 GHz range with 0.2 dB insertion loss, 15 dB return loss, and 55 dB isolation at mid-band. Analog control voltage allows device to achieve 500 nsec switching speeds while handling up to 100 W of continuous wave power.



Original Press Release:



Microsemi Launches PIN Diode Switch Element Optimized for High Power HF, VHF and UHF Transmit/Receive Switch Applications



Monolithic Microwave Surface Mount SP2T Switch Handles 100W of Continuous Wave Power from 100 MHz to 1 GHz



ALISO VIEJO, Calif. – Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced a new high power monolithic microwave surface mount (MMSM) series-shunt SP2T PIN diode reflective switch, the MPS2R10-606. The device is optimized for high frequency (HF),very high frequency (VHF) and ultrahigh frequency (UHF) high power transmit/receive (T/R) switching in applications such as magnetic resonance imaging (MRI) receive arrays and first responder, military, aviation and marine radio communications.  The new device leverages Microsemi's unique 50-year history supplying premier PIN diode products for challenging radio frequency (RF) power, small signal switching and receiver power limiting functions.



Microsemi's new MPS2R10-606 switch provides frequency coverage from 100 megahertz (MHz) to 1 gigahertz (GHz) with 0.2 decibel (dB) insertion loss, 15 dB return loss and 55 dB of isolation at mid-band. A simple analog control voltage allows the device to achieve 500 nanosecond (nS) switching speeds while handling up to 100 watts (W) of continuous wave (CW) power. Available in a compact, nonmagnetic 2.03 mm x 1.27 mm format, the MPS2R10-606 switch meets RoHS requirements per EU directive 2002/95/EC, and is fully compatible with pick and place and surface-mount technology (SMT) solder reflow manufacturing techniques.



"Our MRI and communication radio customers are requiring an increased level of functional integration coupled with form factor reduction, which is consequently driving the need for PIN diode switches with higher density, functionality and performance," said Vincent Cannistraro, senior director and business unit manager for Microsemi's RF/Microwave Discrete Products business unit. "Our new PIN diode switch technology in a compact MMSM package format is a key enabler here, and permits designs to be implemented at significantly higher power levels compared with traditional gallium-arsenide (GaAs), metal-semiconductor field-effect transistor (MESFET) and silicon-on-SOI solutions."



In addition, the MPS2R10-606's technology supports public safety, aviation, marine, and military handheld and rack mount radio hardware (JTRS), which are critical in combating multiple international and domestic threats. As Microsemi's PIN diode MMSM switches are nonmagnetic, they offer the high density and performance required for the implementation of MRI receive arrays.



According to a recent survey by Strategy Analytics, the land-based military radio market alone will approach $6.5 billion in 2024. Microsemi's MPS2R10-606 switch is ideal for this growing market, as it combines compact size, fast switching and high CW power handling capability.



Microsemi: Continued Leadership in PIN Diodes

Microsemi continues to develop premier PIN diode products and currently offers a comprehensive line of RF and microwave GaAs and silicon PIN diodes, which range from ultralow junction capacitance (Cj) beam lead PIN diodes capable of switching up to 40 GHz, to high power PIN diodes designed to handle 60 decibel-milliwatts (dBm) CW power. Designed for low intermodulation switching and attenuation, these PIN diode products cover a wide variety of applications including mobile and fixed communications systems, radar systems to Ka-band frequencies, wideband electronic warfare (EW) systems, test instrumentation, MRI systems, cellular base stations, software-defined radios (SDRs), T/R switch control and duplexers. Microsemi's PIN diodes are available in die, flip chip, beam-lead, stripline, glass axial, plastic, ceramic, low magnetic, hermetic, wafer-scale and surface-mount options.



Key features of the MPS2R10-606 include:

--  100W CW power handling capability

--  Low insertion loss: 0.2 dB

--  High isolation: 55 dB

--  Low return loss: 15 dB

--  High switching speed: 500 nS

--  Stable low leakage passivation with rugged glass body



Availability

The Microsemi MPS2R10-606 is available in a highly integrated, compact 2.03 mm x 1.27 mm wafer-scale format, is RoHS compliant, and is supplied with gold plated terminations. For more information, visit http://www.microsemi.com/existing-parts/parts/136674. For product availability, sales or technical information, contact Sales.Support@microsemi.com.



About Microsemi

Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com.



Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.



CONTACT:

Farhad Mafie

VP Worldwide Product Marketing

949-356-2399



Beth P. Quezada

Director, Corporate Communications

949-380-6102

Email: press@microsemi.com



Web Site: http://www.microsemi.com

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