Optical Imaging System helps build transistors.

Press Release Summary:

CrystaLas(TM) laser-based excimer submodule can be integrated into R&D or manufacturing tool to control large-grain-size-crystal growth for fabrication of thin film transistors (TFTs). Device provides location controlled, high resolution, high power silicon film treatment with low temperature process. It is available with Lambda Physik LPX(R) 210 excimer laser for R&D, or Lambda Physik Lambda STEEL(TM) 670 or 1000 excimer laser for production.

Original Press Release:

MicroLas Introduces New UV Optical System for Excimer Laser-Based Crystallization of Thin Silicon Films--CrystaLas

March 1, 2002, Fort Lauderdale, FL - The new CrystaLas(TM) excimer laser-based optical system is designed for the annealing and crystallization of thin silicon films used in the fabrication of thin film transistors (TFTs) for organic light emitting diode (OLED) displays and active-matrix-liquid-crystal-displays (AMLCDs). These films can be applied for metal-oxide-semiconductor (MOS) processes common in microelectronics. Crystallization of a silicon film on insulator (SOI) is a key process step for 3-D CMOS integration. The system can also be used for controlled annealing and activation of ion-implanted silicon i.e. for the production of CMOS transistors. CrystaLas provides location controlled, high resolution, high power silicon film treatment with a low temperature process. For high performance applications, even single-crystal-like silicon film regions can be produced using CrystaLas.

CrystaLas consists of an advanced, state-of-the-art, UV (308nm) optical imaging system that utilizes a Lambda Physik LPX(R) 210 excimer laser for R&D, or a Lambda Physik Lambda STEEL(TM) 670 or 1000 excimer laser for production. The benefits of CrystaLas are 2 micrometer lines and spaces resolution, high energy density handling capability, homogenous energy density profile, large area illumination, proven long optics lifetimes, and system versatility for the integration into a wide variety of manufacturing or R&D process development tools. CrystaLas now makes it possible to use new, low- temperature techniques in producing TFTs on large area substrates such as low-cost glass, plastics, metal films, flexible materials, etc.

CrystaLas is designed as a submodule for integration into an R&D or manufacturing tool to specifically control large-grain-size-crystal growth for use in the advanced fabrication of thin film transistors (TFTs). The CrystaLas design incorporates the latest illumination techniques needed for sequential lateral solidification (SLS) invented by Professor James Im at Columbia University.

Custom and standard tool designs are now available to R&D groups developing processes for next generation devices in micorelectronics, and manufacturing in the large area electronics display industry.

MicroLas designs and manufactures UV optical modules and components, as well as complete optical systems for integration into workstations. Lambda Physik is the worldwide technology leader for pulsed UV and tunable laser sources for scientific, medical, lithography and other industrial applications.

Statement Under the Private Securities Litigation Reform Act The statements in this press release that relate to future plans, events or performance are forward-looking statements that involve risks and uncertainties, including risks associated with uncertainties related to contract cancellations, manufacturing risks, competitive factors, uncertainties pertaining to customer orders, demand for products and services, development of markets for the Company's products and services and other risks identified in the Company's SEC filings. Actual results, events and performance may differ materially. Readers are cautioned not to place undue reliance on these forward-looking statements, which speak only as of the date hereof. The Company undertakes no obligation to release publicly the result of any revisions to these forward-looking statements that may be made to reflect events or circumstances after the date hereof or to reflect the occurrence of unanticipated events.

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