NX5730A 1 ns Pulsed IV Memory Test Solution offers system-level adjustment.

Press Release Summary:

NX5730A 1 ns Pulsed IV Memory Test Solution is used to characterize magnetic tunnel junction for spin transfer torque magnetoresistive random access memory. Unit allows user to apply high-speed pulsed voltages to switch MTJ and is suitable for STT-MRAM research applications. Product can perform MTJ characterization tests such as BERTs, endurance tests and switching characteristics. Solution is designed to combine with a semi-automated prober and is embedded with software.


Original Press Release:

Keysight Technologies Announces High-Throughput 1 ns Pulsed IV Memory Test Solution-Accelerates Development, Commercialization of New Memory, Including STT-MRAM

Dedicated solution with Keysight’s technical expertise allows engineers to overcome challenges in conventional test environments

Highlights:

  • Precise and fast characterization of new memory, such as STT-MRAM-from DC measurement to high-speed pulsed IV measurement (down to 1 ns)
  • 10 to 100 times faster cycle test, such as performing a bit error rate test (BERT)
  • Clear visualization of the MTJ switching waveform

Keysight Technologies, Inc. (NYSE: KEYS) today announced a solution to characterize magnetic tunnel junction (MTJ) for spin transfer torque magnetoresistive random access memory (STT-MRAM) to overcome challenges of conventional rack and stack base test environments. Keysight’s new NX5730A High-Throughput 1 ns Pulsed IV Memory test solution is a dedicated solution for researchers and engineers struggling with the characterization of MTJ devices on silicon wafers.

STT-MRAM is getting a lot of attention as the preferred, next-generation high-performance non-volatile memory-such as the memory used in mobile and storage devices. MTJ is the most important component of STT-MRAM, with fast and accurate characterization of MTJ being key success factor for achieving a company’s time-to-market goals.

The NX5730A enables users to apply accurate and high-speed pulsed voltages (down to 1 ns pulse width) to switch MTJ, and to precisely and quickly measure the resistance of MTJ before and after switching. In addition to resistance measurement, the NX5730A allows engineers to capture and visualize MTJ switching waveforms clearly during the writing pulse, even if the pulse width is very narrow (down to 1ns pulse). The NX5730A allows users to accurately and quickly perform all typical MTJ characterization tests in one solution. This includes BERTs, endurance tests, switching characteristics with various voltages and the width of writing pulses, switching time evaluation by visualizing switching waveforms, and DC tests (e.g., resistance-voltage characteristics). Keysight also provides customization support to control electromagnet equipment for characterization with magnetic fields.

“Keysight’s new NX5730A stems from a collaboration with Tohoku University’s Center for Innovative Integrated Electronic Systems (CIES) STT-MRAM activities which resulted in a successful outcome as announced in March of 2015,” said Masaki Yamamoto, general manager of Keysight’s Wafer Test Solutions. “Our customer experiences several challenges in MTJ characterization with conventional rack and stack-base test environments, such as a time-consuming BERT, inaccurate writing voltage and difficulty of high-speed pulsed IV, such as 1 ns pulse widths. The NX5730A is in direct response to our customers’ needs for MTJ characterization, and the NX5730A is already used in multiple memory research facilities, including CIES. Moreover, Keysight continually develops its advance technology under CIES and Keysight collaboration.”

The NX5730A enables accurate characterization through 1) system-level adjustment with dedicated system design, and 2) Keysight’s expertise in RF measurement and system integration. The NX5730A performed approximately 10 to 100 times faster BERTs through faster measurements and optimized system controls. The NX5730A software allows customers to execute all typical MTJ tests only with a few steps. The NX5730A is designed to combine with a semi-automated prober to full-automated prober-making it ideal for STT-MRAM research to early production.

Additional Information More information about the NX5730A is available at www.keysight.com/find/nx5730. Information about Keysight’s collaboration with Tohoku University on STT-MRAM test solutions for super low-power electronic systems is available at the Keysight newsroom: http://about.keysight.com/en/newsroom/pr/2015/18mar-em15050.shtml

About Keysight Technologies

Keysight Technologies is a leading technology company that helps its engineering, enterprise and service provider customers optimize networks and bring electronic products to market faster and at a lower cost. Keysight’s solutions go where the electronic signal goes, from design simulation, to prototype validation, to manufacturing test, to optimization in networks and cloud environments. Customers span the worldwide communications ecosystem, aerospace and defense, automotive, energy, semiconductor and general electronics end markets. Keysight generated revenues of $2.9B in fiscal year 2016. In April 2017, Keysight acquired Ixia, a leader in network test, visibility, and security. More information is available at www.keysight.com.

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