Press Release Summary:
- 3300 V and 1700 V SiC MOSFETs available in 1000 and 450 mΩ options as SMD
- Features high avalanche, short circuit ruggedness and low conduction losses at all temperatures
- Simplifies power systems across energy storage, renewable energy and industrial motors
Original Press Release:
GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturization of Auxiliary Power Supplies
GeneSiC announces availability of industry-leading 3300V and 1700V discrete SiC MOSFETs that are optimized to achieve unparalleled miniaturization, reliability and energy savings in industrial housekeeping power.
Dulles, VA / December 4, 2020 -- GeneSiC Semiconductor, a pioneer and global supplier of a comprehensive portfolio of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of next-generation 3300V and 1700V 1000mΩ SiC MOSFETs – G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J. These SiC MOSFETs enable superior performance levels, based on flagship Figures of Merit (FoM) that enhance and simplify power systems across energy storage, renewable energy, industrial motors, general-purpose inverters and industrial lighting. Products released are:
G2R1000MT33J – 3300V 1000mΩ TO-263-7 G2R™ SiC MOSFET
G2R1000MT17D – 1700V 1000mΩ TO-247-3 G2R™ SiC MOSFET
G2R1000MT17J – 1700V 1000mΩ TO-263-7 G2R™ SiC MOSFET
G3R450MT17J – 1700V 450mΩ TO-263-7 G3R™ SiC MOSFET
G3R450MT17D– 1700V 450mΩ TO-247-3 G3R™ SiC MOSFET
GeneSiC’s new 3300V and 1700V SiC MOSFETs, available in 1000mΩ and 450mΩ options as SMD and Through-Hole discrete packages, are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhances their value proposition.
“In applications like 1500V solar inverters, the MOSFET in auxiliary power supply may have to withstand voltages in the range of 2500V, depending on the input voltage, turns ratio of the transformer and the output voltage. High breakdown voltage MOSFETs obviate the need for series connected switches in Flyback, Boost and Forward converters thereby reducing parts-count and reducing circuit complexity. GeneSiC’s 3300V and 1700V discrete SiC MOSFETs allow the designers to use simpler single switch based topology and at the same time provide customers with reliable, compact and cost-effective system" said Sumit Jadav, Senior Applications Manager at GeneSiC Semiconductor.
- Superior price-performance index
- Flagship QG x RDS(ON) figure of merit
- Low intrinsic capacitance and low gate charge
- Low conduction losses at all temperatures
- High avalanche and short circuit ruggedness
- Benchmark threshold voltage for normally-off stable operation up to 175°C
- Renewable energy (solar inverters) and energy storage
- Industrial motors (AC servos)
- General-purpose inverters
- Industrial lighting
- Piezo drivers
- Ion-beam generators
All devices are available from authorized distributors - https://www.genesicsemi.com/sales-support/
About GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers' end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.