New IGT5259CW25 Power Transistor is Suitable for C-Band Continuous Wave Applications

Press Release Summary:

Integra Technologies’ IGT5259CW25 GaN/SiC RF Power Transistor is matched to 50 Ω and is operated in 5.2 - 5.9 GHz frequency range. Unit offers a gain of 12 dB and minimum output power of 25 W at 36 V drain bias.

Original Press Release:

Fully-Matched, 5-6 GHz RF Power Transistor Offers 25 Watts of Power

EL SEGUNDO, California (USA) – May 23, 2018 – Integra Technologies (, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, has announces a new, fully-matched, gallium nitride on silicon carbide (GaN/SiC), RF power transistor that is ideal for C-band, continuous wave (CW) applications.

IGT5259CW25 is fully matched to 50-ohms, operates at the instantaneous frequency range 5.2 - 5.9 GHz, and offers a minimum of 25 W of output power at 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when utilizing this transistor.)

IGT5259CW25 is a newly released design. The datasheet is available for download along with this full release at

For immediate assistance or questions regarding IGT5259CW25, please contact Integra’s customer service team at

About Integra Technologies, Inc. |

Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume radar, avionics, defense, communications, EW, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.

Agency Contact: Angela McGrath,, 978-463-0780

Company Contact: Sales,, 310-606-0855 

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