Press Release Summary:
Integra’s IGN1011L1200 L-Band Avionics Transistor is assembled via chip and wire technology with utilization of gold metallization. The unit offers an operating frequency of 1.03 - 1.09 GHz range, 50 V supply voltage and 6.4% duty factor. It is suitable for use in under class AB operation where negative gate voltage and bias sequencing is required. The transistor is housed in metal-based package and sealed with ceramic epoxy lid.
Original Press Release:
High Power L-Band Avionics Transistor Offers Up to 1200W
EL SEGUNDO, California (USA) – August 28, 2018 – Integra Technologies (www.integratech.com), a leading designer and supplier of high-power RF and microwave transistors and amplifiers, offers a GaN power transistor, best suited for L-band avionics.
IGN1011L1200 is a GaN-on-SiC HEMT technology, offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4% duty factor. With typical >17dB gain and 75% efficiency, IGN1011L1200 is a GEN-2 device. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramicepoxy lid.
This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100% high power RF tested in a fixed tuned RF test fixture.
Learn more about IGN1011L1200 and download the datasheet at www.integratech.com/ign1011l1200-l-band-gan-sic-transistor.
About Integra Technologies, Inc. | www.integratech.com
Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.
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