Press Release Summary:
- Delivers high gain with selectable modes and ultra-low power consumption
- Covers key sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz
- Operating temperature ranges up to +115°C TCB
Original Press Release:
Renesas Strengthens Active Antenna Systems Market Leadership with New RF Amplifier for 4G/5G Infrastructure Systems
New F1490 RF Amplifier with Ultra-Low Quiescent Current Provides Power Savings, More Margin for Gain Budget, and Solid Performance
Tokyo, Japan, August 5, 2020 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today strengthened its robust RF Amplifiers portfolio with the new F1490 delivering much lower quiescent current (75 mA) than competitive solutions. The F1490 is a second-generation high-gain, 2-stage RF amplifier that covers the key sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz. The F1490 benefits designers with simplified product selection for their transmitter (Tx) lineup, elimination of a gain block with better margin, two selectable gain modes for system design flexibility, lower power consumption, and superior performance.
“The F1490 delivers high gain with selectable modes and ultra-low power consumption, while maintaining high OP1dB performance and 2.4 dB noise figure, to meet all the system-level requirements customers want from their massive MIMO 5G pre-driver,” said Naveen Yanduru, Vice President of RF Communications, Industrial and Communications Business Division at Renesas. “We are excited to continue driving LTE and 5G innovation with our RF amplifier solutions for AAS, 4G/5G base stations, and other wireless communications equipment.”
Designed to operate within the 1.8 GHz and 5.0 GHz frequency range, the F1490 RF amplifier features high gain, high linearity, and wide bandwidth, and is well suited for use with both FDD and TDD sub-6 GHz 5G applications. The F1490’s pin-to-pin compatibility with current devices lowers the cost of design updates.
Key Features of the F1490
- Two selectable gain modes: 39.5 dB high gain or 35.5 dB low gain
- High performance OIP3 of 38 dBm and OP1dB of 24 dBm
- RF frequency range of 1.8 GHz to 5.0 GHz
- Ultra-low quiescent current of 75 mA
- Supply voltage of 5V
- Up to +115°C TCB operating temperature
Today’s higher data rates drive the need for better radio signal-to-noise ratios, which translates to the need for Renesas’ higher linearity RF components. The company’s patented RF solutions with unique technical innovations address the evolving needs of a wide range of applications, including cellular 4G/5G base stations, communications systems, microwave (RF/IF), CATV, and test and measurement equipment. Renesas’ AAS solutions include interface amplifiers, low noise amplifiers, switches and pre-drivers to address the high performance transmit and receive requirements of massive MIMO with the highest efficiencies in the smallest form factors. See the complete portfolio at Renesas RF & Microwave products.
Samples of the F1490 are available now in a 3mm x 3mm, 16-pin QFN package with mass production available in September 2020. For more information, including technical documentation, tools and samples, please visit: idt.com/F1490.
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live. A global leader in microcontrollers, analog, power, and SoC products, Renesas provides comprehensive solutions for a broad range of automotive, industrial, infrastructure, and IoT applications that help shape a limitless future. Learn more at renesas.com. Follow us on LinkedIn, Facebook, Twitter, and YouTube.
Renesas Electronics Corporation