Press Release Summary:
Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and wire technology and uses gold metallization. The transistor unit is featured in a metal-based package, which is sealed with a ceramic-epoxy lid. The IGN1011L120 features 17dB of gain and a drain efficiency of 75%.
Original Press Release:
High Power IFF Transistor Best Suited for L-Band Avionics Offering 120 W
EL SEGUNDO, California (USA) – August 15, 2018 – Integra Technologies (www.integratech.com), a leading designer and supplier of high-power RF and microwave transistors and amplifiers, offers a IFF avionics transistor offering 120W peak output power using GaN/SiC technology.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 - 1.09 GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
This 100% high power RF tested transistor for new designs has 17dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.
To learn more about IGN1011L120, download the full datasheet here https://www.integratech.com/ign1011l120-l-band-gan-sic-transistor/.
About Integra Technologies, Inc.| www.integratech.com
Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners. Agency Contact: Angela McGrath, email@example.com, 978-463-0780 Company Contact: Marie Bladek, firstname.lastname@example.org, 310-606-0855