N-Channel Power MOSFET targets automotive applications.

Press Release Summary:

Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max RDS(ON) of 2.4 mΩ (@ VGS=10 V), low voltage drive (VGS=6 V), and gate threshold of 2.5–3.5 V.

Original Press Release:

Toshiba Introduces New Automotive N-ch Power MOSFET

Features Ultra-Low On-Resistance, Low Voltage Drive for Increased Power Efficiencies

IRVINE, Calif. -- Toshiba America Electronic Components, Inc. (TAEC)* today announced the expansion of its lineup of automotive N-channel power MOSFETs with the addition of a new 100V, 160A device: the TK160F10N1L. Offering low on-resistance and a low voltage drive as well as a narrowed gate threshold voltage, the TK160F10N1L keeps current balances in parallel operation in large-current applications such as automotive equipment, motor drives, DC-DC converters and power supplies.

As the popularity of electric automotive power systems increases, so too does the need for better power efficiencies. In order to accommodate the increased power requirements that come along with systems such as those found in hybrid electric vehicles (HEVs), electronic power steering systems (EPSs), electronic braking, 48V systems, integrated start/stop systems (ISS/ISGs), inverters and more, automotive suppliers are looking for low on-resistance, thermally efficient packaging and high overall switching performance from their power MOSFET suppliers. Toshiba's new TK160F10N1L meets all of these requirements.

The TK160F10N1L is fabricated using Toshiba's advanced U-MOS-VIII-H process node with a new package that incorporates copper connector technology. This technology improves current handling capabilities, enhances thermal properties and lowers package resistance, while also eliminating bond wires for increased reliability. This results in a TO-220SM(W) package device with a maximum on-resistance (RDS(ON)) of 2.4mΩ (@ VGS=10V), a low voltage drive (VGS=6V) and a narrowed gate threshold voltage of 2.5 to 3.5V.

Highly efficient, low heat generating operation makes the TK160F10N1L suitable for automotive designs. The TK160F10N1L's U-MOSVIII-H structure provides further design benefits by handling spike noise or oscillation during switching operation.

Key Features
• Low on-resistance: RDS(ON)=2.0mΩ (typ.) (VGS=10V)
• Small gate threshold voltage: Vth=2.5 to 3.5V (narrow: 1V range)
• Low channel-to-case thermal resistance: Rth(ch-c)=0.4°C/W (max)
• High channel temperature rating: Tch=175°C
• Low switching noise
• AEC-Q101 qualified

Main Specifications 
(@Ta=25°C)

PolarityPart numberAbsolute maximum ratingsRDS(ON)
max
@VGS
=6 V
(mΩ)RDS(ON)
max
@VGS=10
V
(mΩ)Vth
(V)Rth(ch-c)
max
(°C/W)PackageSeriesVDSS
(V)ID
(A)IDP
(A)Tch
(°C)N-chTK160F10N1L1001604801753.92.42.5 to 3.50.4TO-220SM(W)U-MOSVIII-H

Pricing and Availability
The TK160F10N1L is available now. For more details, samples and pricing information, please contact your local Toshiba Sales Office.

*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide (as of March 31, 2016). Visit Toshiba's web site at toshiba.semicon-storage.com.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com

CONTACT: Rebecca Bueno, Toshiba America Electronic Components, Inc., Tel.: (949) 462-7885, rebecca.bueno@taec.toshiba.com