MOSFETs suit space-constrained applications.
Share:
Press Release Summary:
Housed in DFN3x3EP package, AON740x Series high-side MOSFETs enable DC-DC designers to achieve high current and power density. Package's exposed copper lead-frame permits efficient heat transfer into PCB, while 3 x 3 mm design saves space. Available in six 30 V models with VGS of ±12 or ±20 V, MOSFETs are suited for notebook PCs, blade servers, networking equipment, graphics cards, and DC-DC power supply modules.
Original Press Release:
Alpha & Omega Semiconductor Introduces Compact DFN3x3EP Package in Combination with its Latest SRFET(TM) MOSFET Technology
Two families combine to shrink DC-DC converter designs SUNNYVALE, Calif., - December 7, 2007 - Alpha & Omega Semiconductor, Inc. (AOS) now offers its advanced MOSFETs in the compact DFN3x3EP package and is the first to offer a monolithically integrated Schottky diode (SRFET(TM)) in this type of package. The new product family is ideally suited for space-constrained applications requiring high efficiency DC-DC conversion such as notebook PCs, blade servers, networking equipment, graphics cards and DC-DC power supply modules. The new DFN3x3EP package allows DC-DC designers to achieve higher current and power density as a result of the package's exposed copper lead-frame, which permits efficient heat transfer into the printed circuit board. The 3mm by 3mm package saves significant space by using only one-third the board area of an SO-8. At the same time, this smaller-sized DFN3x3EP package maintains the same 60°C/W thermal performance as SO-8-packaged devices. The AON740x family consists of fast-switching high-side MOSFETs. They can be combined in synchronous buck converters with the low-side AON770x SRFET(TM) family for optimal efficiency and performance. The SRFET(TM) device's Schottky body diode features a low-forward voltage drop of 0.4V that reduces power losses and a soft-recovery characteristic that reduces ringing and associated EMI. "Recent advances in MOSFET processes are enabling significant reductions in silicon die sizes for a given RDS(ON). The resulting current density increases need to be complemented by similar improvements in packaging technology," said David Grey, director of MOSFET Marketing at AOS. "AOS meets this challenge by combining our latest optimized MOSFET technologies - such as the SRFET(TM) - with a thermally efficient DFN3x3EP package to provide the electrical and thermal performance demanded by today's power management applications." Summary:
Part Type SRFET(TM) VDS (V) VGS IDS (A) RDS(ON) Qg Qgd Price $US Number (+/-V) (mOhm max) (nC) (nC) (1K pcs) 25°C 70°C 10V 4.5V AON7400 N 30 12 11 9 12.5 14.5 10 2.7 $0.53 AON7700 N YES 30 12 14.5 11 8.5 10 25 8.4 $0.60 AON7406 N 30 20 10 8.2 15 23.5 9 4.7 $0.35 AON7702 N YES 30 20 13.5 10 10 14 16 5.5 $0.59 AON7408 N 30 20 10 7 22 34 6 3 $0.31 AON7704 N YES 30 20 10 7.5 20 31 6.1 2.7 $0.38
Pricing and Availability: Please see table for pricing information. These devices are available immediately in production quantities. About AOS Alpha & Omega Semiconductor, Inc. is a fabless semiconductor company that develops leading-edge analog power management solutions. AOS offers a wide portfolio of power MOSFET, Power IC and Transient Voltage Suppressor products that incorporate advances in device design, silicon and packaging technologies. AOS's products meet the ever-increasing performance and power-efficiency requirements in high volume consumer applications such as portable and desktop computers, digital cameras, cell phones and LCD panels. AOS has offices and sales representatives worldwide including the Americas, Europe and Asia Pacific. For more information, please visit www.aosmd.com.
