MOSFETs handle reduced supply voltages in portables.

Press Release Summary:

Supporting operation at 1.5 V gate drive (VGS) voltage, ECOMOS(TM) series is designed to meet requirements of portable electronic devices. Available package sizes - 1.8 x 1.6 x 0.8 mm, 3.0 x 1.9 x 0.8 mm, and 3.0 x 2.8 x 0.8 mm - respectively support max power dissipation ratings of 0.8, 1.25, or 1.5 W. Configurations include single P- or N-channel devices (with or without Schottky barrier diode) and complex, multi-die dual P- or N-channel devices.

Original Press Release:

ROHM ECOMOS(TM) Series Efficiently Handles Reduced Supply Voltages in Portables

Advanced, proprietary process yields dramatic improvement in on-resistance at very low gate drive voltage; small footprint, low-profile packages require less board space SAN DIEGO, Calif. - The new ECOMOS(TM) series of P-channel and N-channel MOSFETs from ROHM Semiconductor are designed to meet the prescribed operation at lower gate drive voltages that emerging generations of portable electronic devices require. ROHM's advanced proprietary processing has produced devices that exhibit RDS(ON) values as much as 90% lower than comparable devices when operated at ultra-low 1.5 V or 1.2 V gate drive (VGS) voltages. This improved electrical performance combined with ROHM's unique packaging design provides both high-efficiency, excellent power dissipation and small device footprint. The new ECOMOS 1.5 V products are offered in three package sizes, depending on maximum power dissipation (PD), in configurations that include single P-channel or N-channel devices (with or without Schottky barrier diode) and complex, multi-die dual P-channel or N-channel devices. The three package sizes with salient specifications* are:

• WEMT6: 1.8x1.6x0.8 mm (1613), PD(MAX) = 0.8 W
• TSST8: 3.0x1.9x0.8 mm (3016), PD(MAX) = 1.25 W
• TSMT8: 3.0x2.8x0.8 mm (3024), PD(MAX) = 1.5 W (*see datasheets for 1.2 V and 1.5 V specifications and a compete list of available packages) ROHM Semiconductor's Field Application Engineering Manager, Kevin Turchin, said: "As a leader in semiconductor fabrication technology, ROHM Semiconductor designs and manufactures our own equipment and processes. The advanced fabrication techniques we developed for ECOMOS have resulted in dramatic improvement in RDS(ON), particularly when low gate drive voltages are required. This process has also yielded parts with reduced die size, which makes it possible to offer devices in smaller, lower-profile packages." Price: US$ 0.16-0.46 (Small OEM Quantities) Availability: Samples Now Delivery: 12 Weeks ARO About ROHM Semiconductor ROHM Semiconductor is the industry leader in system LSI, discrete components and module products, utilizing the latest in semiconductor technology. ROHM's proprietary production system, which includes some of the most advanced automation technology, is a major factor in keeping it at the forefront of the electronic component manufacturing industry. In addition to its development of electronic components, ROHM has also developed its own production system so that it can focus on specific aspects of customized product development. ROHM employs highly skilled engineers with expertise in all aspects of design, development and production. This allows ROHM the flexibility to take on a wide range of applications and projects and the capability to serve valuable clients in the automotive, telecommunication and computer sectors as well as consumer OEMs.