MOSFETs are housed in TO-220 packages.

Press Release Summary:

Models IXTP01N100D and IXTP02N05D high voltage depletion mode MOSFETs are normally on at 0V gate bias and require -5V gate bias to block current. Model IXTP01N100D is rated 1000V/100mA with 110 Ohm RDS(on) at VGS = 0V while IXTP02N05D is rated 500V/200mA and has RDS(ON) of 30 Ohms. Both are housed in TO-220 package for 25W at TC=25 deg C power dissipation. Applications include current regulators, solid state relays, and voltage suppressors.

Original Press Release:

IXYS Introduces High Voltage Depletion Mode MOSFETs.

Santa Clara, CA, January 10, 2002. IXYS Corporation (NASDAQ: SYXI), a leading supplier of power semiconductors for power conversion and motion control applications, announced today the introduction of two new high voltage depletion mode MOSFETs, the IXTP01N100D and the IXTP02N05D. A depletion mode MOSFET differs from the usual enhancement-mode MOSFET in that it is normally on at 0V gate bias and requires a negative gate bias to block current. The IXTP01N100D is a 1000V/ 100mA rated MOSFET with a 110 Ohm RDS(on) at VGS = 0V while the IXTP02N05D is rated at 500V/200mA and an RDS(on) of 30 Ohms. The required gate bias for turn-off is -5V and both devices are housed in the TO-220 package allowing for high power dissipation (25W at Tc= 25 degrees C). Some of the many applications for depletion mode MOSFETs are in level shifters, current regulators, normally on solid state relays, inrush current limiting, Off-line linear regulators, input transient voltage suppressors and the like. Pricing for these parts in 1K quantities follows: IXTP01N100D: $0.97 IXTP02N05D: $0.86 Deliveries of sample quantities of both types are from stock and production quantities of both types will become available in 8-12 weeks. IXYS Corporation offers a broad line of Power Semiconductors, including Power MOSFETs, IGBTs, Ultra-fast Reverse Recovery Diodes, silicon and gallium arsenide Schottky diodes, thyristors and rectifiers, Multi-chip Modules, DCB ceramic substrates and Power interface Integrated Circuits. Statements in this press release regarding IXYS' business that are not historical facts are "forward- looking statements" that involve risks and uncertainties, including, but not limited to demand for the Company's products, the ability of the company to develop, manufacture, and market new products, demand by end-users for the products produced by the Company's customers, and the other risks detailed from time to time in the Company's reports filed with the Securities and Exchange Commission.


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