Press Release Summary:
TSDF12830YS and TSDF32830YS Dual-MOS Monolithic Integrated Circuit devices combine 2 MOSMIC amplifiers, one optimized for VHF applications and the other for UHF applications, and integrated switch in SOT363 plastic package. First MOSMIC stage features fully internal, self-biasing network-on-chip for optimal cross-modulation performance and low noise. Second MOSMIC stage features partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL integrated circuits.
Original Press Release:
Vishay's New Dual-MOSMIC® Devices Combine VHF- and UHF-Optimized Amplifiers and Integrated Band Switch in SOT363 Package
New Devices Provide Cost and Space Savings, Serving as High-Volume, Mainstream AGC Amplifier Solution for TV Tuner Front End
SANTA CLARA, CALIFORNIA - March 12, 2004 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced the release of the first parts in a new family of dual-MOSMIC® (MOS Monolithic Integrated Circuit) devices that combine two MOSMIC amplifiers, one optimized for use in VHF applications and the other for UHF applications, and an integrated switch in the space-saving, industry-standard SOT363 plastic package.
With excellent dynamic performance, a compact package, and added space savings provided by an integrated band switch that enables one-line switching, the new TSDF12830YS and TSDF32830YS serve as cost-effective, high-volume solutions for applications including AGC-controlled front-end amplifiers of digital and analog tuners in TVs, VCRs, set-top boxes, satellite systems, and other multimedia and communications equipment.
Each of the devices released today features two different MOSMIC amplifiers with common Source and Gate 2 leads. The first MOSMIC stage, which features a fully internal, self-biasing network-on-chip, is designed to provide for optimal cross-modulation performance and low noise figures at lower VHF frequencies. The second MOSMIC stage is intended to provide superior gain and noise figure performance at the higher frequencies of the UHF range. It features a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL integrated circuits.
The devices' integrated band switch not only reduces the number of lines on the printed circuit board, but also lowers the number of external components required. Integrated antiserial diodes between the gates and source protect against excessive input voltage. The drain output pin of each stage is opposite to the corresponding Gate 1 pin in an "SOT363(L)" pin configuration. Both the TSDF12830YS and TSDF32830YS offer a high AGC range with a soft slope and a main AGC control range of 3 V to 0.5 V. The two devices offer identical electrical specifications while giving designers a choice of two pinout options for the amplifiers.
New Dual-MOSMIC Series: Summary Table
Band Forward Transadmittance (mS) Gate 1 Input Capacitance Optimum Freq. at 800 MHz Cross Modulation at 40 dB AGC (dB-V) Package
VHF* 28 2.5 1.5 Min. 105 SOT363
UHF+ 31 1.9 1.3 Min. 100 SOT363
VHF* 28 2.5 1.5 Min. 105 SOT363(L)
UHF+ 31 1.9 1.3 Min. 100 SOT363(L)
* No dc connection to Gate 1 of VHF part
+ For PLL-ICs with PNP switching transistors
Samples and production quantities of the new dual-MOSMIC devices are available now with lead times of eight weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $10.00 per 100 pieces.
Vishay, a Fortune 1,000 Company listed on the NYSE, is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, and transducers). The Company's components can be found in products manufactured in a very broad range of industries worldwide. Vishay is headquartered in Malvern, Pennsylvania, and has plants in 17 countries employing over 25,000 people. Vishay can be found on the Internet at www.vishay.com.