Metrology Tool handles patterned wafers down to 30 x 30 µm.
Press Release Summary:
Targeted for front-end process control of 22 nm technology nodes and beyond, Model EX-300 utilizes LEXES Low-energy Electron induced X-ray Emission Spectrometry for addressing challenges in elemental composition, thickness determination, and dopant dosimetry. Instrument handles challenging High K Metal Gate, epitaxial layers such as Boron in Silicon Germanium and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production.
Original Press Release:
Cameca Unveils New Semiconductor Tool for B:SiGe and HKMG
Versatile Metrology Tool for Front-End Process Control Of 22nm Technology Nodes and Beyond
GENNEVILLIERS, FRANCE - CAMECA, a world leader in scientific instrumentation and metrology solutions for semiconductor labs and fabs, has unveiled the latest addition to its line of high-end metrology systems-the EX-300 metrology tool targeted for front-end process control of 22 nm technology nodes and beyond.
"CAMECA is very proud to introduce the EX-300," notes Dr. Michel Schuhmacher, CAMECA Vice President and Chief Technical Officer. "This highly versatile metrology tool benefits from CAMECA's 10-years of experience with LEXES (Low-energy Electron induced X-ray Emission Spectrometry) technology."
"We are convinced that the EX-300 will become the metrology tool of choice for semiconductor fabs integrating new challenging processes," adds Dr. Schuhmacher. "The EX-300 offers unique capabilities for front-end compositional control at and near the surface. The instrument targets front-end process control for 22nm technology nodes and performs metrology of patterned wafers down to 30x30µm."
The EX-300 utilizes LEXES, a unique surface probing technique pioneered by CAMECA. The technology is now well-established for addressing challenges in elemental composition, thickness determination and dopant dosimetry. With dozens of CAMECA LEXFAB 300 instruments currently installed at the top-ten semiconductor fabrication facilities worldwide, the technology is considered the standard for semiconductor R&D and ramping-up phases at the most advanced nodes as well as for high-volume production monitoring
CAMECA optimized the performance of the EX-300 for challenging High K Metal Gate (HKMG), epitaxial layers such as Boron in Silcon Germanium(B:SiGe) and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production. In addition, the instrument is designed to deliver enhanced long-term stability and minimize mean time to repair (MTTR).
About CAMECA
CAMECA has more than 50 years of experience in the design, manufacture and servicing of scientific instruments for material micro- and nano-analysis. Since pioneering Secondary Ion Mass Spectrometry (SIMS) and Electron Probe Microanalysis (EPMA) instrumentation in the 1950s, CAMECA has remained an undisputed world leader, while achieving numerous breakthrough innovations in such complementary techniques as LEXES and Atom Probe Tomography.
More recently CAMECA has evolved successfully from a provider of scientific instrumentation for the international research community to a provider of metrology solutions for the semiconductor industry. Headquartered near Paris, CAMECA has subsidiaries in China, Germany, Japan, Korea, Taiwan and the United States along with a global network of agents. Acquired in 2007 by AMETEK, Inc, a leading global manufacturer of electronic instrument and electromechanical products, CAMECA is now a unit of AMETEK's Materials Analysis Division.
