LDMOS RF Transistor targets TV broadcast applications.
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Press Release Summary:
Used in single-ended or push-pull configuration, 50 V Model MRF6V3090N is designed for TV transmitters employing analog and digital modulation formats. Unit delivers 90 W peak power at P1dB with greater than 40% efficiency through UHF broadcast frequency band. As linear driver, device achieves 21 dB power gain and drain efficiency of 12% with average output power of 4.5 W, based on DVB-T OFDM signal. Adjacent-channel power ratio at 4 MHz offset is -68 dBc over 4 kHz integration bandwidth.
Original Press Release:
Freescale Optimizes 50V LDMOS RF Transistor Line-up for TV Broadcast Transmitters
Freescale optimizes 50V LDMOS RF transistor line-up for TV broadcast transmitters
MRF6V3090N helps reduce operating costs for UHF equipment broadcasters by streamlining system design and speeding time to market
AUSTIN, Texas - Sept. 14, 2009 -- Freescale Semiconductor introduces a 50V laterally diffused MOS (LDMOS) RF power transistor designed to streamline UHF transmitter equipment designs. The MRF6V3090N device demonstrates industry-leading RF figures of merit, and when combined with Freescale's MRF6VP3450H transistor, is designed to enable system-level power reductions that can potentially save broadcasters thousands of dollars in operating costs.
Transmitters represent a significant operating cost for TV broadcasters, and a leading contributor to this operating cost is the power consumed by RF power amplifiers. Highly efficient RF power transistors, such as the MRF6V3090N and MRF6VP3450H, can help reduce this cost by converting a greater percentage of the required DC input power into RF output power. In addition, individual transistors with higher RF power capability enhance system-level efficiency by minimizing device count and combining losses.
The latest addition to Freescale's growing family of RF power LDMOS transistors for broadcast applications, the MRF6V3090N is designed for TV transmitters employing both analog and digital modulation formats. The MRF6V3090N delivers 90W peak power at P1dB with greater than 40 percent efficiency through the UHF broadcast frequency band.
As a linear driver, the MRF6V3090N achieves 21 dB power gain and drain efficiency of 12 percent with an average output power of 4.5W, based on a DVB-T OFDM signal. The adjacent-channel power ratio (ACPR) at a 4 MHz offset is -68 dBc over a 4 kHz integration bandwidth. As an analog or digital TV final for low power repeaters, the device has typical UHF broadband performance of greater than 40 percent efficiency, 21 dB gain and an IM3 of less than -30 dBc.
Total design flexibility
Housed in Freescale's innovative and cost effective over-molded plastic packaging technology, the MRF6V3090N can be used in a single-ended or push-pull configuration. This enables design engineers to use the device in multiple applications and bands requiring high gain and efficiency.
Pricing and availability
The MRF6V3090N is sampling now, and full production is expected in Q4 2009. A reference test fixture is available to aid in the evaluation and design process. For sampling and pricing information, please contact Freescale Semiconductor, a local Freescale sales office or an authorized distributor.
About Freescale Semiconductor
Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial and networking markets. The privately held company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations around the world. www.freescale.com.
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