Integra Releases IGT5259CW25 Transistor for C-Band CW Radar Applications
Press Release Summary:
The IGT5259CW25 GaN-on-SiC High Power Transistor is offered in a PL44C2 metal-based package sealed with a ceramic-epoxy lid and is assembled via chip and wire technology. The unit provides 5.2 to 5.9 GHz frequency coverage and is fully matched to 50 ohms. It delivers a minimum output power of 25 W at 36 V drain bias.
Original Press Release:
Integra to Showcase New High Power C-Band Transistor at European Microwave Week
EL SEGUNDO, California (USA) – September X, 2018 – Integra Technologies, a leading designer and supplier of highpower RF and microwave transistors and amplifiers, is excited to attend this year’s European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain.
At EuMW, Integra will showcase their newly released high power GaN-on-SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, this device is best suited for Cband CW radar applications. This transistor is fully-matched to 50-ohms, and offers a minimum of 25W of output power at 36V of drain bias.
Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra’s new package PL44C2. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Stop by booth # 308/309 to chat with Integra’s sales representative, Trilight about Integra’s high power capabilities and their line of new high-power X-band devices to be released in 2019.
Learn more about European Microwave Week at www.eumweek.com and download the datasheet for IGT5259CW25 at www.integratech.com/new-fully-matched-high-power-gan-sictransistor-25w-cw-5-6-ghz.
About Integra Technologies, Inc.| www.integratech.com
Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.
Agency Contact: Angela McGrath, amcgrath@strandmarketing.com, 978-463-0780
Company Contact: Marie Bladek, mbladek@integratech.com, 310-606-0855
