Integra Launches GaN/SiC RF Power Modules for Creating SWaP-C Optimized High Power Amplifiers

Press Release Summary:

GaN/SiC RF Power Modules are offered with built-in functions such as RF matching, GPS, output noise suppression, VSWR protection and temperature compensation. Units provide an output power of up to 2400 W with efficiencies up to 70%. The modules are designed for CW radar systems.


Original Press Release:

GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design

EL SEGUNDO, California (USA) – July 10, 2018 – Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, is pleased to announce the formal launch of a new line of over a dozen standardized RF Power Modules.

Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or “pallets”, these new, ultra-efficient RF Power Modules are being developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.

Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. Integra’s RF power modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around Integra’s commitment to push their advanced gallium nitride on silicon carbide (GaN-on-SiC) 50-ohm RF Power Transistor technology up to X-band territories. Standard RF Power Modules currently offer output power up to 2400 W, and efficiencies up to 70%. Unique footprints and packaging approaches are available.

To learn more about these advanced, integrated RF Power Module solutions for high power amplifier design, and to request pricing, visit: https://www.integratech.com/rf-power-modules/

About Integra Technologies, Inc. – www.integratech.com

Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume radar, avionics, defense, communications, EW, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.

Agency Contact: Angela McGrath, amcgrath@strandmarketing.com, 978-463-0780

Company Contact: Sales, sales@integratech.com, 310-606-0855 

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