IGBTs target induction heating applications.

Press Release Summary:

Using Field Stop structure and avalanche-rugged Trench gate technology, 1,200 V Models FGA20N120FTD and FGA15N120FTD offer optimal tradeoffs between conduction losses and switching losses, maximizing efficiency. Built-in fast-recovery diode is optimized for Zero Voltage Switching technology. Utilizing lead-free terminals, both models have been characterized for moisture sensitivity in accordance with Pb-free reflow requirements of joint IPC/JEDEC standard J-STD-020.

Original Press Release:

Fairchild Semiconductor's Field Stop Trench IGBTs Increase Efficiency in Microwave Ovens and Induction Heating Applications

San Jose, California - March 19, 2008 - Fairchild Semiconductor's (NYSE: FCS) new series of 1200V Field Stop Trench IGBTs, the FGA20N120FTD and FGA15N120FTD, provide system designers of induction heating applications with a highly efficient solution. Using both Field Stop structure and avalanche-rugged Trench gate technology, these IGBTs offer optimal tradeoffs between conduction losses and switching losses, which maximize efficiency. Compared to conventional NPT-Trench IGBTs, the FGA20N120FTD offers 25 percent lower conduction losses and eight percent lower switching losses, significantly reducing the system's operating temperature. By lowering the cooling needs, system reliability is increased and overall system cost is reduced. Reliability is further ensured by a built-in fast-recovery diode (FRD) that is optimized for Zero Voltage Switching (ZVS) technology.

Fairchild's FGA20N120FTD and FGA15N120FTD minimize performance variability and device failures in avalanche-mode operation due to a tight parameter distribution and increased avalanche energy. This is achieved with Fairchild's innovative Field Stop structure and proprietary advanced Trench gate cell design.

Key features of the FGA20N120FTD and FGA15N120FTD include:
o Low switching losses to improve system efficiency.
o Low saturation voltage to reduce conduction losses.
o Built-in fast-recovery diode (FRD) optimized for ZVS topology to help designers reduce component count while further ensuring system reliability.
o Tight parameter distribution to reduce performance variation.
o Excellent avalanche capability to extend operational life.

The FGA20N120FTD and FGA15N120FTD utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price (each, 1000 pcs): FGA20N120FTDTU: US $4.00; FGA15N120FTDTU: US $2.80
Availability: Samples available now
Delivery: 8 weeks ARO

Contact Information:
To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

For information on other products, design tools and sales contacts, please visit: www.fairchildsemi.com.

Note to Editor: For a datasheet in PDF format, please go to:

To learn more contact:
Fairchild Semiconductor:
Louise Merriman
Corporate Marketing
1-(800) 341-0392 X 8761
Fax: (207) 775-8161
Email: louise.merriman@fairchildsemi.com

About Fairchild Semiconductor:
Fairchild Semiconductor (NYSE: FCS) is a global leader delivering energy-efficient power analog and power discrete solutions. Fairchild is The Power Franchise®, providing leading-edge silicon and packaging technologies, manufacturing strength and system expertise for consumer, communications, industrial, portable, computing and automotive systems. An application-driven, solution-based semiconductor supplier, Fairchild provides online design tools and design centers worldwide as part of its comprehensive Global Power ResourceSM. Please contact us on the web at www.fairchildsemi.com.

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