IGBTs minimize energy loss in motor control circuits.
Press Release Summary:
Rated for 1,200 V operation, Models STGW30N120KD and STGW40N120KD are suited for applications up to 30 and 40 A, respectively. Units can survive short circuits lasting up to 10 µs, making them resistant to common causes of motor-controller failures, such as error in gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. Housed in TO-247 package, transistors minimize environmental impact of home appliances, HVAC systems, and industrial machines.
Original Press Release:
Low-Loss 1200V IGBT Series from STMicroelectronics Reduces Energy Use in Everyday Motor Drives
New devices boost efficiency and reliability to reduce environmental footprint
Geneva, October 9, 2009 - A new series of power transistors from STMicroelectronics (NYSE: STM), a world leader in power applications, reduces the environmental impact of daily-use equipment such as home appliances, HVAC systems, and industrial machines by minimizing the two major sources of energy loss in motor-control circuits. The STGW30N120KD and the STGW40N120KD are Insulated Gate Bipolar Transistors (IGBTs) that have low energy loss when conducting, like an ordinary IGBT, and also reduce losses while switching.
These IGBTs achieve power savings using ST's PowerMESH(TM) process, and deliver greater all-round energy efficiency. Lower switching losses allow a higher operating frequency, which, in turn, permits smaller and lower-cost components in power-control circuits. In addition, the IGBTs' compact industry-standard TO-247 package saves component count by also integrating the ultra-fast freewheeling diode required by most circuits.
The 1200V IGBTs are capable of surviving short circuits lasting up to 10 microseconds, making them resistant to common causes of motor-controller failures, such as an error in the gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. Hence by improving reliability, the STGW30N120KD and STGW40N120KD save repair and replacement, leading to fewer service calls and reducing the cost of ownership for end users.
The new series is rated for 1200V operation, which allows use at higher AC line voltages such as 440V or 480V. The new devices join ST's existing 600V low-loss IGBTs in providing one of the industry's most extensive power-transistor portfolios.
The STGW30N120KD and STGW40N120KD are for applications up to 30A and 40A, respectively. They are in full production and are available, respectively, at $2.50 and $2.80 each, in quantities of 5000 pieces.
Further information is available at www.st.com/igbt.
About STMicroelectronics
STMicroelectronics is a global leader serving customers across the spectrum of electronics applications with innovative semiconductor solutions. ST aims to be the undisputed leader in multimedia convergence and power applications leveraging its vast array of technologies, design expertise and combination of intellectual property portfolio, strategic partnerships and manufacturing strength. In 2008, the Company's net revenues were $9.84 billion. Further information on ST can be found at st.com.
