Press Release Summary:
For 3-level neutral point clamp (NPC) topologies, VS-ENQ030L120S providesÂ collector-to-emitter breakdown voltage of 1,200 V andÂ collector current rating of 30 A. For 3-level inverter stages, VS-ETF075Y60U and VS-ETF150Y65U respectively offer choice of 75 and 150 A collector current ratings and 600 and 650 V collector-to-emitter breakdown voltages and perform upÂ to +175 Â°C. For double boost converters, 15 A VS-ETL015Y120H features collector-to-emitter breakdown voltage of 1,200 V.
Original Press Release:
New Vishay Intertechnology IGBT Power Modules Offer Complete Integrated Solutions for Solar Inverters and UPS
Scalable Devices Offered in EMIPAK Packages for NPC Topologies, 3-Level Inverters, and Multi-Boost Converters
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced four new IGBT power modules designed specifically for string solar inverters and medium-power-range uninterruptible power supplies (UPS). Combining Ultrafast Trench IGBTs, high-efficiency HEXFRED® and FRED Pt® diode technologies, and thermistors for easy thermal management in single packages featuring pressfit technology, the Vishay Semiconductor modules offer complete integrated solutions for inverters based on 3-level neutral point clamp (NPC) topologies and interleaved multiple-channel MPPT (maximum power point tracking) boost converters.
With their integrated design, the devices released today help designers reduce time to market and improve overall system performance. For 3-level NPC topologies, the VS-ENQ030L120S provides a collector-to-emitter breakdown voltage of 1200 V and a collector current rating of 30 A. Designed for 3-level inverter stages, the VS-ETF075Y60U and VS-ETF150Y65U offer designers a choice of 75 A and 150 A collector current ratings and 600 V and 650 V collector-to-emitter breakdown voltages, respectively, and provide high-temperature performance to +175 °C. Optimized for double boost converters, the 15 A VS-ETL015Y120H features a collector-to-emitter breakdown voltage of 1200 V, high-efficiency silicon boost diodes, integrated 62 A bypass diodes, and panel short-circuit full-current reverse polarity protection diodes. All devices offer a modular and scalable design to fit higher power level applications.
Offered in the EMIPAK-1B (VS-ENQ030L120S) and EMIPAK-2B (VS-ETF075Y60U, VS-ETF150Y65U, and VS-ETL015Y120H) packages, the power modules' solderless pressfit technology allows for easy PCB mounting, while an exposed DBC substrate enables low thermal resistance. The devices provide low internal inductance and switching losses while offering operating frequencies up to 20 kHz. The modules' optimized layout helps to minimize stray parameters for better EMI performance.
The RoHS-compliant devices are UL-approved file E78996 (approval pending for the VS-ENQ030L120S). Vishay's power modules are compliant to industry standards, and custom solutions can be tailored to meet specific application requirements.
Samples and production quantities of the new IGBT power modules are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery only starts at $27 for the VS-ETL015Y120H, $37 for the VS-ETF075Y60U, $48 for the VS-ETF150Y65U, and $52 for the VS-ENQ030L120S.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
HEXFRED and FRED Pt are registered trademarks of Vishay Intertechnology.