IGBT Modules come in compact SP3 packages.
Press Release Summary:
Designed for motor control applications, power modules feature 3-phase IGBT bridge using NPT IGBTs for 20-50 kHz frequency applications and Trench Field Stop IGBTs for 5-20 kHz applications. Current ratings are in range of 30-50 A for 600 V and 15-25 A for 1,200 V NPT IGBTs and 20-75 A for 600 V and 25-35 A for 1,200 V Trench Field Stop IGBTs. Units have 12 mm profile and 40.8 x 73.4 mm footprint, and feature integrated sensors to monitor module case temperature.
Original Press Release:
Microsemi Launches New Line of IGBT 3-Phase Bridge Modules in Compact SP3 Packages
IRVINE, Calif., Sept. 13, 2007 -- Microsemi Corporation (Nasdaq: MSCC) a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has introduced a new line of standard IGBT 3-phase bridge power modules in the compact SP3 package.
Designed for motor control applications, the new power modules feature a 3-Phase IGBT bridge using fast NPT IGBTs for 20 to 50 KHz high frequency applications and Trench Field Stop IGBTs for 5 to 20 KHz low frequency applications. All the new modules feature integrated sensors to monitor the module case temperature for over-temperature protection.
Current ratings are in the range of 30A to 50A for 600V and 15 to 25A for 1200V fast NPT IGBTs; and 20A to 75A for 600V and 25A to 35A for 1200V Trench Field Stop IGBTs.
With a very low 12mm profile and a small 40.8 mm x 73.4 mm footprint, the SP3 isolated package provides a very compact power solution. Their solderable terminals are easily mounted to a PCB. In addition to the main DC supply connections, these products offer extra DC supply pins to connect a decoupling capacitor. Combined with their very low parasitic internal inductance, this solution reduces over-voltage, minimizes noise, and improves operation safety.
While the new standard modules are designed for industrial applications, they are easily upgraded to withstand more severe environmental conditions, like those in aerospace applications:
o Aluminium nitride substrate can replace standard alumina for improved thermal performance
o SiC diodes can replace FREDs for improved switching losses or increased operating frequency or temperature
o Aluminium Silicon Carbide (AlSiC) base plate can replace the standard copper base plate for reduced weight and extended lifetime against wide temperature cycles
o Packaging enhanced to withstand temperature ranges as low as -60°C
Technical data sheets for Microsemi's new compact IGBT 3-phase bridge power modules are available on the company website, microsemi.com:
IGBT NPT: 600V/30A - APTGF30X60T3G
600V/50A -- APTGF50X60T3G
1200V/15A - APTGF15X120T3G
1200V/25A - APTGF25X120T3G
IGBT Trench: 600V/20A - APTGT20X60T3G
600V/20A - APTGT30X60T3G
600V/50A -- APTGT50X60T3G
600V/75A - APTGT75X60T3G
1200V/25A - APTGT25X120T3G
1200V/35A - APTGT35X120T3G
Samples are available immediately. Production prices in quantities of 1,000 to 5,000 pieces range from $14.75 to $36.17.
About Microsemi Corporation
Microsemi, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The Company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive, and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, optimizing battery performance, reducing size or protecting circuits. The principal markets the company serves include defense, commercial air, satellite, medical, notebook computers, LCD TVs, mobile, and connectivity applications. More
information may be obtained by contacting the company directly or by visiting its web site at www.microsemi.com.
