HVVFET Power Transistors suit UHF band radar applications.
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Press Release Summary:
Operating across 420-470 MHz band, HVV0405-175 offers UHF radar system designers fully qualified 175 W RF power transistor with 25 dB max gain. Part No. HVV0912-150, rated at 150 W, operates from 960-1,215 MHz, is designed for ground-based Distance Measuring Equipment (DME) systems, and delivers 20 dB power gain. Both parts use High Voltage Vertical Field Effect Transistor (HVVFET(TM)) architecture and withstand output load mismatch corresponding to 20:1 VSWR across all phase angles.
Original Press Release:
HVVi Semiconductors Introduces First HVVFET Power Transistors for UHF Applications
Groundbreaking Vertical Architecture Brings Dramatic Advantages in Output, Gain, Ruggedness
PHOENIX, Dec. 16 -- HVVi Semiconductors, Inc., a developer of silicon RF power transistors, announced at the Asia Pacific Microwave Conference in Hong Kong today the company's first product using the revolutionary High Voltage Vertical Field Effect Transistor (HVVFET(TM)) architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the HVV0405-175 offers UHF system designers a fully qualified 175W RF power transistor with unsurpassed gain and ruggedness specifications.
"Our first HVVFET products offered designers of L-band applications dramatic advantages in terms of output, gain and ruggedness over competitive bipolar and LDMOS alternatives," says Wil Salhuana, President and CMO. "With today's announcement we are extending those same benefits to the UHF band weather and long range radar applications."
At the same time HVVi Semiconductors announced the HVV0912-150, a new addition to company's growing family of power transistors for Distance Measuring Equipment (DME) applications. Operating across a 960 to 1215 MHz band, the HVV0912-150 is designed for ground-based DME systems that require a wider bandwidth than the company's earlier announced parts for airborne DME applications.
Better Gain, Reliability
Like HVVi's earlier HVVFET devices, the two new parts introduced today allow designers to build high density, high impedance systems in easy-to-match 50V components. The HVV0405-175 operates across the 420 to 470 MHz band and delivers up to 175W of power. The new device outperforms competitive bipolar and LDMOS devices by supplying up to 25 dB of gain when pulse width = 300 us and pulse duty cycle = 10% at VDD = 50V and IDQ = 50 mA. The UHF part also boosts system reliability by withstanding an output load mismatch corresponding to a 20:1 VSWR across all phase angles at rated output power and operating voltage across the entire frequency band.
For designers of ground-based DME systems, the HVV0912-150 delivers up to 150W of power. Operating off a 50V supply voltage, the new transistor delivers power gain of 20 dB under a pulse width of 10 usec and a pulse duty cycle of 10%. Like HVVi's other HVVFET devices, the HVV0912-150 is specified to withstand a VSWR of 20:1 across all phase angles.
The HVVFET's unique performance advantages over bipolar and LDMOS alternatives in terms of gain, efficiency and impedance allow designers to eliminate amplification stages in Power Amplifiers (PAs), reduce parts count and shrink PCB requirements. A complete 50V-compatible product line simplifies power supply design and minimizes power supply circuitry. Moreover, the technology's significantly higher rated ruggedness improves reliability and, by eliminating bulky isolators, significantly reduces system size and weight.
Price and Availability
The two new devices are sampling immediately and come in a compact HV400- style, two-lead metal flanged package with liquid crystal polymer lid. Both devices are fully qualified. The HVV0405-175 sells for $280.42 in quantities up to 24 pieces. The HVV0912-150 sells for $316.61 in similar quantities. Both transistors are available through distributor Richardson Electronics.
About HVVi Semiconductors
HVVi Semiconductors Inc. is a developer and supplier of silicon power transistors for radar and avionics applications. The company develops new power solutions based on its innovative new High Voltage Vertical Field Transistor (HVVFET) architecture. Using this proprietary, silicon-based device architecture, HVVi Semiconductors Inc. is developing a new generation of power transistors that offer dramatic improvements in power output, frequency performance, and power efficiency. This new technology will allow OEMs in the radar and avionics to improve system performance and reliability while reducing system and operating costs. HVVi Semiconductors, Inc. is headquartered in Phoenix, Arizona. The company's investors include Mobius, Advanced Technology Ventures, Horizon Ventures and ON Semiconductor. For more information, please visit the company website: hvvi.com.
HVVFET is a trademark of HVVi Semiconductors. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders.
CONTACT: Headquarters: Daniel Ong of HVVi Semiconductors, +1-480-776-3845, daniel.ong@hvvi.com; or Agency Contact: Matthew Quint of Quint Public Relations, +1-650-599-9450, mquint@quintpr.com
