High-Voltage Superjunction MOSFETs feature efficient design.
Press Release Summary:
CoolMOS(TM) devices in C6 Series feature high-voltage superjunction technology for low conduction and switching losses. Operating at 600 V, products are available in models with RDS(on) of 0.125-0.035 W and have low gate charge. They are suited for high-performance switch mode applications that include power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, and induction heating.
Original Press Release:
Microsemi Launches Fifth-Generation CoolMOS Family New C6 Series
Provides MOSFETs for Greater Efficiency and Power Density IRVINE, Calif. - Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog mixed-signal integrated circuits, high reliability semiconductors and RF subsystems, has expanded its CoolMOS(TM) product line with eight new high voltage superjunction MOSFETs designed for highest efficiency and power density. Designated the C6 Series, the new 600V CoolMOS devices feature fifth-generation high voltage superjunction technology for extremely low conduction and switching losses, thus enabling the design of switching systems having new levels of efficiency and power density. The new C6 Series MOSFETs are easy to design in. They are well suited for high power, high performance switch mode applications that include power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating. "With energy efficiency a primary concern for next generation system designs, our new C6 devices enable CoolMOS ease-of-use, as well as performance advantages to reduce both switching and conduction losses over our previous C3 Series technologies," said Philip Zuk, Product Marketing Manager for the discrete Power Products Group. "We see this technology as being a leader in such markets as alternative energy." Key Performance Features (typical values)
- Ten percent lower on-resistance (Ron)
- Forty three percent lower input capacitance (Ciss)
- Forty five percent lower switching losses (Eoff) along with lower conduction losses
- High body diode ruggedness
- Ultra Low gate charge (Qg)
- RoHS compliant CoolMOS MOSFET C6 Series devices now available:
RDS(on) Volts Ohms ID Amps Part Number Device Type Package 600 0.125 30 APT30N60KC6 MOSFET TO-220 600 0.125 30 APT30N60BC6 MOSFET TO-247 600 0.125 30 APT30N60SC6 MOSFET TO-268 600 0.099 38 APT38N60BC6 MOSFET TO-247 600 0.099 38 APT38N60SC6 MOSFET TO-268 600 0.070 53 APT53N60BC6 MOSFET TO-247 600 0.070 53 APT53N60SC6 MOSFET TO-268 600 0.035 106 APT106N60B2C6 MOSFET T-Max
The 1K pricing for part number APT30N60BC6 is $3.33. Contact factory direct for additional pricing. All the announced CoolMOS devices are available for immediate sampling. Technical information is available on the Microsemi web site, www.microsemi.com. Samples can be ordered through this site, or from Microsemi sales representatives and authorized distributors. About Microsemi
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits, high reliability semiconductors and RF subsystems. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals. Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at www.microsemi.com. SOURCE: Microsemi Corporation
