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Product News: Electronic Components & Devices
High-Speed Discrete IGBTs feature low saturation voltage.
Press Release Summary:
Sep 07, 2012 - Suited for use in AC and DC motor control, home appliances, UPSs, solar inverters, and induction cookers, AP20GT60 series features collector/emitter voltage (VCE) rating of 600 V and peak gate emitter voltage rating (VGE) of Â±20 V. Nominal models have saturation voltage, VCE(sat), rating @ Ic=20 A of 1.8 V and max power dissipation of 25, 125, or 104 W at 25Â°C. Corresponding models with internal diode and fast recovery diode feature VCEsat of 1.7 V at Ic=19 A or Ic=12 A or 1.8 @ Ic=20 A.
Original Press Release
New Family of High Speed 600V Discrete IGBTs from Advanced Power Electronics Corp. Feature Very Low Saturation Voltage
Press release date: Sep 01, 2012
All AP20GT60 family IGBTs feature a collector/emitter voltage rating, VCEs, of 600V, a peak gate emitter voltage rating, VGE, of ±20V, and a very low saturation voltage.
AP20GT60P-HF-3 benefits from a typical saturation voltage, VCE(sat), of 1.8V at Ic=20A, a maximum power dissipation at 25degC of 104W, and comes in a fully RoHS-compliant and halogen-free TO-220 package. AP20GT60ASP-HF-3 (with internal diode) has a typical saturation voltage of 1.7V at Ic=19A, a maximum power dissipation at 25degC of 78W, a diode forward current rating of 8A, and a diode pulse forward current rating of 40A. It comes in a fully RoHS-compliant and halogen-free TO-220 package.
Featuring a saturation voltage of 1.8V at Ic=20A and a maximum power dissipation at 25degC of 25W, the AP20GT60I-HF-3 device comes in a fully RoHS-compliant halogen-free TO-220CFM insulated package. The corresponding AP20GT60ASI-HF-3 IGBT with internal diode has a typical saturation voltage of 1.7V at Ic=12A, a maximum power dissipation at 25degC of 33W, a diode forward current rating of 8A, and a diode pulse forward current rating of 40A . The device comes in a fully RoHS-compliant halogen-free TO-220CFM insulated package.
AP20GT60W-HF-3 is in the fully RoHS-compliant halogen-free TO-3P allowing maximum power dissipation at 25degC of 125W. It also benefits from a typical saturation voltage of 1.8V at Ic=20A. The equivalent AP20GT60SW-HF-3 device has the built-in fast recovery diode, with a diode forward current rating of 40A, and a typical saturation voltage of 1.8V at Ic=20A. Maximum power dissipation at 25degC is also 125W in a fully RoHS-compliant halogen-free TO-3P package.
About Advanced Power Electronics Corp. Established in Taiwan in 1998, Advanced Power Electronics Corporation has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company's wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-certified, with a commitment to consistent quality assurance and increased economies of scale, Advanced Power Electronics Corp. has seen the company revenue increase - trading profitably each year since its foundation - and it has been ranked as one of the world's top fifteen power MOSFET suppliers by iSuppli.
For further information: Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA), Tel: +1 408-717-4231 Email: firstname.lastname@example.org www.a-powerusa.com
For press enquiries: Nick Foot Billings Group Tel.: +44 1491-636393 Email: email@example.com
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