HBT Chip has breakdown voltage of 5 V.
Press Release Summary:
Utilizing 110 GHz fT Silicon Germanium processing technology, NESG303100G SiGe Heterojunction Bipolar Transistor (HBT) is suited for both oscillator and LNA applications in 2.4-5.8 GHz mobile communications designs. Features include maximum stable gain of 21.5 dB at 2 GHz and 10.0 dB at 5.2 GHz, noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz, and hFE of 220-380.
Original Press Release:
New High Performance NEC SiGe HBT Die Now Available from CEL
Santa Clara, CA - July21, 2008 - Engineers whose designs can benefit from the use of die will be interested in the new NESG303100G SiGe HBT chip from NEC. Available now from California Eastern Labs, the NESG303100G is produced using NEC's newest 110GHz fT Silicon Germanium processing technology.
Ideal for both oscillator and LNA applications in 2.4 to 5.8GHz mobile communications designs, key specifications include:
High Breakdown Voltage: 5V
High Maximum Stable Gain: 21.5 dB @ 2 GHz
10.0 dB @ 5.2 GHz
Low Noise Figure: 0.8 dB @ 2 GHz
0.95 dB @ 5.2 GHz
hFE: 220 to 380
More product information plus non-linear models for VCO applications are available on the CEL website. Please visit www.cel.com
California Eastern Laboratories is the authorized North American source for NEC RF, Wireless and Optoelectronic semiconductor products
California Eastern Laboratories
4590 Patrick Henry Drive P.O. Box 54964 Santa Clara, CA 95054-1817 408-988-3500 FAX 408-988-0279 www.cel.com
