Press Release Summary:
Available in 28-pin SOIC package, IX2120B can drive discrete power MOSFETs and IGBTs (that operate up to 1,200 V) in half-bridge, full-bridge, and 3-phase configurations. Max rating of 1,400 VÂ provides additional margin for high-voltage applications, while high/low side outputs feature power DMOS transistors capable of sourcing and sinking 2 A gate drive current. Other features include high voltage level-shift circuitry, advanced HVIC SOI process, and 3.3 and 5 V logic-compatible inputs.
Original Press Release:
IXYS Integrated Circuits Division Announces New 1200V Half-Bridge Gate Driver
IX2120B Drives Both High Side and Low Side IGBTs or MOSFETs
Beverly, Massachusetts, USA – IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ: IXYS), announced the immediate availability of the IX2120B 1200V Half Bridge Gate Driver IC. The IX2120B is a high voltage IC that can drive discrete power MOSFETs and IGBTs that operate up to 1200V. Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2A of gate drive current.
High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high side configuration operating up to 1200V. The IX2120B's 1400V absolute maximum rating provides additional margin for high voltage applications.
“This product complements the full selection of power driver IC’s that we have developed and introduced to the power management market in the last 3 years. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process”, Commented Dr. Nathan Zommer CEO and CTO of IXYS Corporation.
With the IXYS power MOSFETs and IGBT’s products, the ICD drivers, offer IXYS customer The whole system solution in one stop shop, including the Zilog line of MCU’s.
The IX2120B is manufactured on IXYS ICD's advanced HVIC Silicon on Insulator (SOI) process, making the IX2120B extremely robust and virtually immune to negative transients and high dV/dt noise.
The inputs are 3.3V and 5V logic compatible. Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage. The output propagation delays are matched for use in high frequency applications.
The IX2120B can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase configurations. Typical applications include motor drives, high voltage inverters, uninterrupted power supplies (UPS), and DC/DC converters. The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, and optically isolated gate drivers, and the full range of IXYS power semiconductors.
This IX2120B is available in 28-pin SOIC package.
Pricing and Availability
The IX2120B is available in production quantities. Pricing for OEM quantities of 50KU is $1.90
About IXYS ICD and IXYS Corporation
IXYS Integrated Circuits Division, (ICD), a leader in the design and manufacture of solid state relays and high voltage integrated circuits, is a wholly owned subsidiary of IXYS Corporation. IXYS Corporation develops and markets primarily high performance power semiconductor devices that are used in controlling and converting electrical power efficiently in power systems for the telecommunication and internet infrastructure, motor drives, medical systems and transportation. IXYS also serves its markets with a combination of digital and analog integrated circuits, power systems and RF GaAs and GaN based products. Additional information about IXYS Integrated Circuits Division, Zilog and IXYS may be found at www.ixysic.com, www.zilog.com and www.ixys.com.