Gate Driver IC drives GaN FETs and MOSFETs in low-side applications.

Press Release Summary:

Offered in 6-pin SOT-23 package and 6-pin LLP package with exposed pad, LM5114 drives Gallium-Nitride (GaN) power field-effect transistors (FET) and MOSFETs. Independent source and sink outputs from 5 V supply for optimal rise and fall times promote efficiency, while +4 to +12.6 V single power supply range supports range of applications. Other features include 0.23 ohm open-drain, pull-down, sink output; 7.6/1.3 A peak sink/source driver current; and 12 nsec typ propagation delay.

Original Press Release:

New Gate Driver Extends TI's Family of GaN FET Driver ICs

Flexible low-side gate driver enables high efficiency and power density

DALLAS -- Texas Instruments Incorporated (TI) (NASDAQ: TXN) today introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters. Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center applications. For more information, samples and an evaluation board, visit

The LM5114 drives both standard MOSFETs and GaN FETs by using independent sink and source outputs from a 5-V supply voltage. It features a high 7.6-A peak turn-off current capability needed in high-power applications where larger or paralleled FETs are used. The increased pull-down strength also enables it to drive GaN FETs properly. The independent source and sink outputs eliminate the need for a diode in the driver path and allows tight control of the rise and fall times.

TI is showcasing its FET driver family -- the LM5114, the LM5113 in a new micro SMD package, the pin compatible 4-A/8-A UCC27511 low-side gate driver scheduled for release in March, and other products that help unlock the full benefits of GaN FET technology -- in booth #401 at the Applied Power Electronics Conference and Expo (APEC) in Orlando, Florida, Feb. 6-8. APEC is one of the industry's leading conferences for practicing power electronics professionals.

Key features and benefits of the LM5114 low-side gate driver

Independent source and sink outputs for optimized rise and fall times enable higher efficiency.

-- +4-V to +12.6-V single power supply support a wide range of applications.
-- 0.23-Ohm open-drain, pull-down, sink output prevents unintended turn-on.
-- 7.6-A/1.3-A peak sink/source driver current maximizes change-in-voltage over change-in-time (DV/DT) immunity.
-- Matching delay time between inverting and non-inverting inputs reduces dead time losses.
-- 12-ns typical propagation delay enables high switching frequency while maintaining improved efficiency.
-- Up to 14-V logic inputs, regardless of VCC.
-- -40 degrees C to +125 degrees C operating temperature range.

Availability, packaging and pricing

The LM5114 is available in volume now from TI and its authorized distributors. Offered in a 6-pin SOT-23 package and 6-pin LLP package with exposed pad, the suggested retail price is $0.58 in 1,000-unit quantities.

Find out more about TI's power management portfolio:

-- Order samples and an evaluation module of the new GaN FET driver:
-- Get information on all of TI's GaN FET driver solutions:
-- Watch a lab demonstration of the LM5113:
-- Ask questions and share knowledge in the Power forum in the TI E2E(TM) Community: About Texas Instruments

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