GaN Substrates are offered in 2 in. diameters.
Share:
Press Release Summary:
Free-standing gallium nitride (GaN) substrates have uniform dislocation density of 106cm-2 and are available with diameters of 2 in. and smaller. As solid-state blue light emitter, GaN is suited for blue laser diodes, which quadruple data storage on DVDs and print resolution in laser printers, make biomedical laser surgery safer, and double effective range for radar and satellites while increasing bandwidth.
Original Press Release:
ATMI Announces Commercial Sales of Improved 2-Inch Gallium Nitride Substrates
Uniformly Low Dislocation Density And Semi-Insulating GaN Wafers Available
DANBURY, CT - November 25, 2003 - ATMI, Inc. (Nasdaq: ATMI), a supplier of materials to the world's leading semiconductor manufacturers, today announced commercial sales of improved two-inch diameter and smaller gallium nitride (GaN) substrates. The new free-standing GaN substrate products have a uniform dislocation density of 106 cm-2, in contrast to other GaN wafer products that have a low dislocation density only in select regions, which restricts device size and placement. ATMI is also offering engineering samples of semi-insulating GaN substrates for high frequency, high power electronics.
"We expect the introduction of uniformly low dislocation density GaN substrates to set a new standard in Gallium Nitride substrates. We've delivered our GaN wafers to major consumer electronics companies and into every major semiconductor region in the world, and the early feedback is very good, with customers obtaining improved device performance on our GaN substrates," said George Brandes, Director of ATMI's GaN venture.
Brandes continued, "We are confident GaN wafers will help to allow full realization of the enormous benefits of blue laser capabilities. Because of the novelty of our work, we've made significant efforts to protect our intellectual property, and already have more than 20 patents filed or issued around ATMI's GaN processes and substrate growth and fabrication."
"We are producing free-standing two-inch GaN wafers in large volumes with reasonable lead times," said Bob Vaudo, Manager of ATMI GaN Substrates. "We have improved our growth process to enable a reduction in dislocation density by an order of magnitude. ATMI's GaN wafers now meet the critical parameters needed to extend laser lifetime and performance. In high performance electronics, we have developed semi-insulating GaN wafers and are beginning to offer them to select R&D customers in engineering quantities."
As a solid-state blue light emitter, gallium nitride (GaN) is the ideal material for blue laser diodes. Blue lasers can potentially quadruple data storage on DVDs and print resolution in laser printers, make biomedical laser surgery safer and more "invisible," and could ultimately lead to solid-state lighting that could make incandescent and fluorescent light bulbs obsolete.
For high-performance electronics, GaN offers the potential to handle much higher powers and frequencies than conventional materials, potentially doubling the effective range for radar and satellites while increasing bandwidth. GaN-based devices should ultimately lead to increased system efficiency, reduced system costs, and new market applications.
ATMI's Gallium Nitride (GaN) venture business supplies GaN substrates and III-nitride epiwafers to the electronic device community.
ATMI provides specialty materials and materials packaging to the worldwide semiconductor industry. As the Source of Semiconductor Process Efficiency, ATMI helps customers improve wafer yields and lower operating costs. For more information, please visit atmi.com.
For more information contact:
Dean Hamilton
ATMI
203.207.9349 Direct
203.794.1100 x4202
dhamilton@atmi.com
