GaN HEMTs extend reach of broadband systems.

Press Release Summary:

Respectively rated at 10 and 45 W, CGH40010 and CGH40045 are general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) that can be used to optimize efficiency of various broadband applications. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain efficiency at 28 V. Efficiency, gain, and bandwidth attributes make them suitable components for linear and compressed amplifier circuits.

Original Press Release:

Cree GaN HEMTs Extend Reach of General-Purpose Broadband Systems

DURHAM, NC, NOVEMBER 1, 2006 - Today Cree, Inc. (Nasdaq: CREE) announced that sample quantities of two new general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) are now available for order. These new components can be used to enable a variety of broadband applications to perform more efficiently than with standard LDMOS transistors.

The new 10-watt CGH40010 and 45-watt CGH40045 operate at up to 4 GHz with 14 dB of associated power gain and 65-percent drain efficiency when operated at 28 volts. Their efficiency, high gain and broad bandwidth make them ideal components for linear and compressed amplifier circuits. Targeted applications include general-purpose broadband amplifiers and critical communications systems used by police, fire departments and Homeland Security.

"Cree's GaN HEMT technology can significantly outperform existing gallium arsenide or silicon LDMOS technology in broadband systems that need wide bandwidth, low power or high-efficiency performance," said Jim Milligan, Cree's product manager for wide bandgap radio frequency products.

Additional information about Cree wireless products may be obtained by calling Cree at 919-313-5300 or by visiting

About Cree, Inc.
Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency.

Key to Cree's market advantage is its world-class materials expertise in SiC and GaN for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products. Cree drives its increased performance technology into multiple applications, including exciting alternatives in brighter and more-tunable light for general illumination, backlighting for more-vivid displays, optimized power management for high-current, switch-mode power supplies and variable-speed motors, and more-effective wireless infrastructure for data and voice communications.

Cree customers range from innovative lighting-fixtures makers to defense-related federal agencies. Cree's product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio-frequency/wireless devices. For product specifications, please refer to

Cree is a registered trademark of Cree, Inc.

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