GaN HEMT is suited for WiMAX applications.
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Press Release Summary:
Optimized for broadband wireless access and WiMAX applications operating from 3.3-3.9 GHz, CGH35015 is 15 W packaged gallium nitride (GaN) high electron mobility transistor (HEMT) that typically produces 2.5 W of average output power and 20% drain efficiency over frequency range. It features 11 dB of small signal gain and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 V.
Original Press Release:
Cree Introduces GaN HEMT to Broaden WiMAX Power Transistor Options
DURHAM, N.C., May 30 -- Cree, Inc. (NASDAQ:CREE) today announced sample availability of its new 15-watt packaged gallium nitride (GaN) high electron mobility transistor (HEMT), the CGH35015, which is optimized for broadband wireless access and for WiMAX applications operating between 3.3 GHz and 3.9 GHz. GaN HEMTs offer higher linear power and enhanced efficiency performance over wider bandwidths than traditional technologies such as silicon LDMOS or GaAs.
The CGH35015 typically produces 2.5 watts of average output power and 20 percent drain efficiency over the frequency range of 3.3 to 3.9 GHz. It features 11 dB of small signal gain and 2 percent error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 volts.
"The CGH35015 is the first in a series of packaged GaN products Cree plans to introduce this year for the broadband wireless access and WiMAX/WiBro markets," said Jim Milligan, Cree's manager for wide bandgap RF products. "GaN is well suited for applications that operate under high power conditions and that must meet high efficiency and stringent linearity requirements, like WiMAX and other applications that operate between 2 and 6 GHz."
Additional information about the CGH35015 may be obtained by calling Cree at 919-287-7505 or visiting www.cree.com.
About WiMAX
WiMAX is a standards-based wireless technology that provides high- throughput connections over long distances. It can be used for multiple applications, including last mile broadband access, hotspots, cellular backhaul, high-speed enterprise connectivity, and non line-of-sight mobile connectivity.
About Cree, Inc.
Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency. Key to Cree's market advantage is its world-class materials expertise in silicon carbide (SiC) and gallium nitride (GaN) for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products.
Cree drives its increased performance technology into multiple applications including exciting alternatives in brighter and more tunable light for general illumination, backlighting for more vivid displays, optimized power management for high-current switch-mode power supplies and variable speed motors, and more effective wireless infrastructure for data and voice communications. Cree customers range from innovative lighting-fixture makers to defense-related federal agencies.
Cree's product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio- frequency/wireless devices. For additional product specifications please refer to www.cree.com.
Cree is a registered trademark of Cree, Inc.
CONTACT: Deb Lovig, Marketing Communications Manager of Cree, Inc., +1-919-287-7505, or Fax, +1-919-313-5943, or Deb_Lovig@cree.com
