GaN 1,200 W Transistor suits IFF avionics applications.
Press Release Summary:
Pperating over instantaneous bandwidth of 1.03–1.09 GHz, IGN1011L1200 high-power GaN-on-SiC transistor delivers efficiency and output power level needed by IFF transponder designers and others. Under ELM Mode S (48 x (32µs on, 18µs off) 6.4%) pulsing conditions, unit supplies minimum of 1,200 W peak output power with typical >17 dB gain and 75% efficiency from 50 V supply voltage.
Original Press Release:
Integra Announces New 1200W GaN Transistor
Ready-to-Sample 1200W 1.03-1.09 GHz GaN Transistor for IFF-ELM-S
Highest Power in the Industry
San Francisco, CA (USA) – Integra Technologies, Inc. (ITI), a leading designer & manufacturer of high-power RF transistors, pallets and amplifiers, announces the release of a 1200W GaN transistor, IGN1011L1200, for IFF avionics applications.
“This high-power GaN-on-SiC transistor places Integra at the forefront of the L-band Avionics IFF market.” says Fouad Boueri, Integra’s Director of Business Development.
“Its extremely high efficiency (75%) and its carefully chosen output power level provide
cost-cutting advantages to IFF transponder designers, among others.”
About IGN1011L1200:
IGN1011L1200 operates over the instantaneous bandwidth of 1.03 – 1.09 GHz. Under ELM Mode S (48 x (32µs on, 18µs off), 6.4%) pulsing conditions, it supplies a minimum of 1200W of peak output power with typically >17dB gain and 75% efficiency from a 50V supply voltage.
Samples and Availability
The IGN1011L1200 transistor is available immediately for sampling. For pricing and delivery, please email sales@integratech.com
About Integra Technologies
Integra is the premier supplier of high power pulsed transistors and pallets to the Avionics, Radar, Communication and ISM industries, with an enviable portfolio covering frequency bands in the VHF/UHF, L-band, S-band and C-band, for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, bipolar and GaN-on-SiC. Privately owned and operated, Integra employs nearly 100 people at its world headquarters located in El Segundo, CA. Integra’s patented technology starts with an all-gold metallization process for all elements of the die fabrication process to ensure the highest reliability in the industry. With a team of highly knowledgeable RF designers ready to offer application support, Integra offers standard and custom solutions with both discrete devices and integrated pallets for a commanding presence in the global marketplace. With 2 decades of experience, ISO-certified Integra Technologies provides the best of both worlds: Fast response and Ample production capacity. All devices are 100%-screened for large-signal parameters.
More information on Integra can be found at http://www.integratech.com
Media Contact:
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Email: Sales@integratech.com
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