Press Release Summary:
Designed to meet various regional spectrum requirements worldwide, 9 W Model TIM1314-9L features power output of 39.5 dB relative to 1 mW at frequency range of 13.75-14.5 GHz. It is suited for use in Block Upconverter modules in Ku-Band transceivers for Very Small Aperture Terminals. Offering power output of 45.0 dBm, 30 W Model TIM1314-30L is designed for solid-state power amplifiers used in earth or base stations for satellite communication applications.
Original Press Release:
Toshiba Expands Frequency Ranges of 9W and 30W Extended Ku-Band GaAs FET Lines for VSAT Satellite Communications
9W and 30W Devices Now Support 13.75 to 14.5GHz Extended Ku-Band Frequency Range to Meet Various Regional Requirements
Visit TAEC in IEEE MTT-S Booth #1046
SAN FRANCISCO, June 14 / -- Toshiba America Electronic Components, Inc. (TAEC)* today announced the addition of two internally-matched Extended Ku-Band power gallium arsenide field effect transistors (GaAs FETs) that provide wider frequency ranges to meet various regional spectrum requirements around the world for applications in satellite communications. Developed by Toshiba Corp. (Toshiba) the new GaAs FETs will be showcased, along with other Toshiba microwave products, in TAEC's booth, #1046, at this year's IEEE MTT-S International Microwave Symposium, held June 13 through 15 in San Francisco, California.
The 9-watt (W) Toshiba TIM1314-9L features high power output of 39.5 decibels relative to 1 milliwatt (dBm) at a frequency range of 13.75 to 14.5 gigahertz (GHz), compared to the 14.0 to 14.5GHz range of typical Ku-Band FETs. The TIM1314-9L is ideal for use in Block Upconverter modules in Ku-Band transceivers for Very Small Aperture Terminals (VSAT). The device is offered in the 9.7mm x 17.0mm package used for Toshiba's 2W, 4W, 7W and 14.0 to 14.5GHz 9W Ku-Band GaAs FETs, enabling the TIM1314-9L to be used as a drop-in replacement for these devices to increase power output or frequency range in existing designs.
Toshiba's 30W TIM1314-30L is the highest power device of its class currently offered for the solid-state power amplifier (SSPA) market with a power output of 45.0dBm (typ.), and now supports a broader frequency range than Toshiba's previous 30W Ku-band FET. The new device is designed for high power SSPAs used in earth or base stations for satellite communication applications such as those used as replacement for Traveling Wave Tube Amplifiers (TWTA).
"Toshiba has been a recognized leader in advanced technology for internally matched, high power GaAs FETs for C-band and Ku-band since the late 70s. We have been working closely with our OEM customers to continue to advance the technology for this market, and these extended Ku-band devices have been developed in response to customer demand to meet varying bandwidth requirements worldwide," said Christine Lee, business development manager, Microwave Devices, for TAEC.
The TIM1314-9L and TIM1314-30L GaAs FETs are implemented in Toshiba's Heterojunction Field Effect Transition (HFET) process technology and employ Toshiba's cutting edge ion plantation technology to enable development of the highest output FETs. The HFET process is idea for high power microwave devices because of its high carrier concentration that enhances output power and gain.
Part Number TIM1314-9L TIM1314-30L
Frequency 13.75 - 14.5GHz 13.75 - 14.5GHz
Output Power (P1dB) 39.5dBm (typ.) 45.0dBm (typ.)
Gain (G1dB) 6dB (typ.) 5.5 dB (typ.)
Drain Current (Ids) (typ.) 3.0A 10.0A
Third-order Intermodulation (IM3) -25dBc (min.) -25dBc (min.)
Toshiba's Ku-Band GaAs FETs for satellite communications are RoHS-Compatible(1), which means they are intended to meet the requirements of the European Union's Reduction of Hazardous Substances (RoHS) Directive(2), scheduled to take effect July 1, 2006.
Pricing and Availability
The TIM1314-9L is priced at $400 each in sample quantities, and the TIM1314-30L is priced at $1,150.00 in sample quantities. Both devices are available now.
About Solid State Power Amplifiers
Solid-state power amplifiers are an alternative to vacuum-tube technology for generating high power at microwave frequencies. Solid-state circuitry has been steadily replacing vacuum-tube technology for decades but one of the few applications that had resisted change was generation of high power in satellite earth station applications. With recent advances in solid-state microwave power devices, SSPAs now offer superior intermodulation characteristics, lower power consumption, lower operating costs, and longer life than traveling-wave tube amplifiers.
TAEC Microwave Devices Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution system (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems.
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's second largest semiconductor manufacturer and the world's ninth largest integrated manufacturer of electric and electronic equipment. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
All trademarks and tradenames held within are the properties of their respective holders.
(1) RoHS-Compatible -- Toshiba Matsushita Display Technology Co. Ltd. defines "RoHS-Compatible" LCD products as products that either (i) contain no more than a maximum concentration value of 0.1% by weight in Homogeneous Materials(3) for lead, mercury, hexavalent chromium, polybrominated biphenyls (PBBs), and polybrominated diphenyl ethers (PBDEs) and no more than 0.01% by weight in Homogeneous Materials for cadmium, or (ii) fall within one of the stated exemptions set forth in the Annex to the RoHS Directive.
(2) RoHS Directive -- Toshiba Matsushita Display Technology Co. Ltd. defines the "RoHS Directive" as the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(3) Homogeneous Materials -- Toshiba Matsushita Display Technology Co. Ltd. defines "Homogeneous Materials" to mean a material that cannot be mechanically disjointed into different materials. The term "homogeneous" is understood as "of uniform composition throughout," so examples of "Homogeneous Materials" would be individual types of plastics, ceramics, glass, metals, alloys, paper, board, resins and coatings. Toshiba Matsushita Display Technology Co., Ltd. defines the term "mechanically disjointed" to mean that the materials can, in principle, be separated by mechanical actions such as unscrewing, cutting, crushing, grinding or abrasive processes.
CONTACT: Poloi Lin of Toshiba America Electronic Components, Inc., +1-949-623-3098, firstname.lastname@example.org
Web site: http://www.chips.toshiba.com/