Flash Memory includes SD memory controller.
Press Release Summary:
Targeting consumer electronics devices, single-component GB NAND Flash combines up to 4 GB of multi-level cell NAND flash memory with memory controller using industry-standard SD interface. Controller handles block management, error correction code, and wear leveling. Offering alternative to micro hard drives or conventional NAND flash chip, GB NAND provides embedded storage space for music, photos, video files, or other data.
Original Press Release:
Toshiba Adds GB NAND(TM) Flash with Controller for Embedded Storage Applications
Single-Component Solution Stacks Up to 4GB Multi-Level Cell NAND Flash With an SD Memory Controller to Simplify Integration of Embedded Flash Storage
LAS VEGAS, Jan. 8 /-- Toshiba America Electronic Components, Inc., (TAEC) today announced availability in the Americas of GB NAND flash, a single-component embedded memory solution, developed by Toshiba Corp., that combines up to 4 gigabytes(1) of multi-level cell (MLC) NAND flash memory with a memory controller using an industry standard SD interface. Toshiba GB NAND provides another option to simplify integration of embedded flash storage.
GB NAND is targeted for use in consumer electronics devices and is available in capacities from 1GB to 4GB to provide storage space for music, photo, video files or other data. GB NAND is intended for use in the growing number of portable consumer applications such as digital audio/MP3 players, gaming, portable media players, GPS devices and PDAs. The embedded flash devices use the popular SD interface and can be designed to run on the same bus as an SD card, allowing easy design of products that support both embedded flash storage and a removable flash card. Some new controllers feature multiple I/Os making integration even easier.
Toshiba's GB NAND provides an attractive alternative to both micro hard drives or conventional NAND flash chips. The multi-chip packages stack from one to four high capacity NAND flash memory chips and an SD card controller in a single BGA package to minimum space requirements. The memory controller includes an SD interface and handles block management, error correction code (ECC process) and wear leveling. As a result, system designers can take advantage of the high capacity of MLC NAND without the need to develop their own drivers or memory management functions.
"The popularity and ease-of-use of the SD interface, which is used in a growing number of designs, makes GB NAND ideal for applications that require high density embedded storage," said Brian Kumagai, business development manager, NAND Flash, for TAEC.
Toshiba GB NAND Technical Specifications
Name of Product Part Number Capacity
THGVS1G3D1CXGI1 1GB
Toshiba GB NAND THGVS1G4D1CXGI1 2GB
THGVS1G5D1CXGI1 4GB
Supply Voltage 2.7 to 3.6V
Compatible Standard SD Memory Card Compatible Interface
Sequential Read
Performance(2) 10MB/sec3
Sustained Write(3) 5MB/sec
Package 18mm x 12mm x 1.2mm BGA 1 and 2GB
18mm x 12mm x 1.4mm BGA 4GB
Weight Approximately 5g
Availability
Samples of Toshiba GB NAND flash modules are available now.
NAND Flash Background
Toshiba was a principal inventor of NAND- and NOR-type Flash memory technology in the 1980's, and maintains leadership in Flash technology today, with a complete line of removable and embedded NAND solutions to meet various removable and embedded application requirements. NAND Flash has become one of the leading technologies for solid-state storage applications because of its high-speed programming capability, high-speed erasing, and low cost. The sequential nature (serial access) of NAND-based Flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND Flash memory products are optimized for general solid-state storage, image file storage and audio for applications such as solid-state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
All trademarks and tradenames held within are the properties of their respective holders.
MEMY 07 456
(1) When used herein in relation to memory density, gigabyte and/or GB means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may be less. For details, please refer to specifications.
(2) Assumes the host is in the fastest SD mode (default setting).
(3) Read and write speed may vary depending on the read and write conditions, such as devices you use and file sizes you read and/or write. (For purposes of measuring data transfer and read-write speed in this context, 1 MB = 1,000,000 bytes).
CONTACT: Jan Johnson of MultiPath Communications, +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; or Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
Web site: http://chips.toshiba.com/
