Driver-MOSFET achieves 96.5% power supply efficiency.

Press Release Summary:



Supplied in 6 x 6 x 0.95 mm, 40-pin QFN package with 0.5 mm lead pitch, R2J20651NP is 35 A integrated driver-MOSFET for CPU and DDR type SDRAM power supplies in PCs and servers. It conforms to Intel® DrMOS specifications and achieves max efficiency when running at switching speed of 200 kHz and producing 1.8 Vdc from 5 Vdc input. Comprised of 2 high-side/low-side power MOSFETs and driver circuit, product integrates control, temperature detection, and low-side MOSFET disable functions.



Original Press Release:



Renesas Technology's Latest Integrated Driver-MOSFET Achieves Industry's Best Power Supply Efficiency - 96.5 percent - and has a 6x6mm Package for Intel® DrMOS Standard Products



When used for CPU and DDR type SDRAM power supplies in PCs and servers, the R2J20651NP power device enables reductions in energy consumption, while facilitating system miniaturization.

SAN JOSE, Calif. - December 15, 2008 - Renesas Technology America, Inc. today announced the R2J20651NP, a 35A Integrated Driver-MOSFET for CPU and DDR type SDRAM power supplies in PCs, servers and other types of electronic products. When running at a switching speed of 200kHz and producing 1.8V DC from a 5V DC input, it achieves up to 96.5 percent efficiency - the highest in the industry. Thus the device aids the design of green systems that run cooler and use less power. Moreover, it incorporates control functions that can be used to help improve system safety.

Integrating two high-side/low-side power MOSFETs and a driver circuit in a small (6mm x 6mm) 40-pin QFN package, the Renesas R2J20651NP is a tenth-generation MOSFET product. It conforms to the "Integrated Driver-MOSFET (DrMOS)"* Specifications, Revision 3.0 from Intel Corporation. This conformance enables customers to implement standardized system designs, including 5V single-supply-voltage motherboards that benefit from proven component technology.

The exceptionally efficient integrated driver MOSFET permits the manufacture of products that are more compact and convenient. By decreasing heat generation, it allows design engineers to use a smaller heat sink and fewer capacitors and other passive components. Also, the device's 6mm x 6mm package, built with the high thermal dissipation/low-loss package technology of a wireless copper-clip structure, is almost half the size of the previous-generation chip, saving circuit-board space. Furthermore, since the new device can handle up to 35A, it can easily implement high-density DC-DC converters. Its output range is 0.8V to 5.0V.

The R2J20651NP includes - for the first time in a DrMOS standard product - a temperature-detection function that sends a warning signal when the driver IC temperature exceeds 130°C. This signal has various uses, depending on the application. For example, when connected to the system power supply control IC, this signal can be used to shut down the system to help prevent circuit failure in advance by tasking the driver IC MOSFET to monitor its own temperature and heat generation.

Another feature of the R2J20651NP is a low-side MOSFET disable function. The power device supports a discontinuous operating mode in which its low-side MOSFET is forcibly turned off by internal logic using the LSDBL# pin that's connected to the driver IC. This function is effective at preventing two types of problems: a rapid power discharge or load-side voltage spikes that might otherwise occur during pre-bias operation when there is already a voltage remaining on the outputs at startup. This stop function also boosts efficiency during light-load operation.

Addressing the needs of designers of power supplies
Today PCs and servers are handling larger amounts of information and offering increasingly sophisticated functions, a reality that in turn is increasing the power consumption in these computers. As a result of the technology trend toward lower voltages and larger currents in electronic components, system engineers face important issues when designing the DC-DC converters that provide the supply voltage to these devices. They must limit any increases in the number of power devices and passive components such as capacitors used in these power supplies. Simultaneously, they must also limit the heat generated and reduce the space needed for the supplies.

Renesas has responded to these issues by producing a succession of popular power supply solutions. Renesas' higher-performance R2J20651NP miniature integrated driver MOSFET extends the legacy of innovation by supporting operation from a single 5V input and handling a 35A output, despite having a package measuring only 6mm x 6mm. The device's leadless package enables superb thermal dissipation, since it uses die pads that take up most of the bottom surface. Besides CPU voltage regulators and DC-DC converters for memory chips in servers and PCs, the new power device is an ideal solution for DC-DC converters for FPGAs and digital signal processor (DSP) chips in digital appliances, games, and other consumer electronic products.

Price and Availability
Product Name
Package
Max. Output
Input Voltage Range
Sample Price / Availability
R2J20651NP Integrated Driver-MOSFET
40-pin QFN (6mm x 6mm)
35A
4.5V to 16V
$3.4 / Q1 2009

About Renesas Technology Corp.
Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC) devices, System-in-Package (SiP) products and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TSE:6501, NYSE:HIT) and Mitsubishi Electric Corporation (TSE:6503), Renesas Technology achieved consolidated revenue of 951 billion JPY in FY2007 (end of March 2008). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in around 20 countries with about 26,800 employees worldwide. For further information, please visit www.renesas.com

Notes
*"Integrated Driver-MOSFET (DrMOS)" is a package standard proposed by Intel Corporation that features integration of a driver IC and two high-side/low-side MOSFETs.

Intel and the Intel logo are trademarks of Intel Corporation in the United States and other countries.

Other product names, company names or brands mentioned are the property of their respective owners.

Specifications: Renesas Technology R2J20651NP High-efficiency Integrated-Driver MOSFET for DC/DC Power Supplies in PCs, Servers, Consumer Electronic Products, Etc.

Item
Specifications
Product name
R2J20651NP
Input voltage
4.5V to 16V
Output voltage
0.8V to 5.0V
Maximum rated current
35A
Maximum operating frequency
2MHz
Maximum power supply efficiency
96.5% at Vin = 5V, Vout = 1.8V, fsw = 200kHz
Configuration
High-side MOSFET, Low-side MOSFET, Driver IC
Package
40-pin QFN (6mm x 6mm x 0.95mm, 0.5mm lead pitch)

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