Press Release Summary:
Supplied as RoHS-compliant, 3.12 x 1.63 x 0.1 mm die, EWH2001ZZ monolithic microwave integrated circuit (MMIC) distributed power amplifier is based on GaAs pHEMT technology. It delivers +26 dBm typ output power at 1 dB compression through 12 GHz (+23 dBm typ to 20 GHz). Small-signal gain is 19 dB typ at 2 GHz and 18 dB typ at 20 GHz, with gain flatness of Â±2 dB from DC to 20 GHz. Product is 100% DC and RF tested and visually inspected to MIL-STD-883, Method 2010 requirements.
Original Press Release:
Endwave Introduces DC to 20 GHz GaAs MMIC Distributed PA
SAN JOSE, CA-Endwave Corporation (NASDAQ: ENWV), a leading provider of high-frequency RF devices and integrated subsystems, has announced its model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwaveintegrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz and typically +23 dBm through 20 GHz.
The amplifier features impressive gain and gain flatness over its broad bandwidth, with small-signal gain of typically 19 dB at 2 GHz and typically 18 dB at 20 GHz, with gain flatness of ±2 dB from DC to 20 GHz. In fact, the broadband amplifier provides usable gain of 10 dB through 30 GHz. In addition, gain remains flat with temperature, with typical temperature-dependent gain variations of only 0.03 dB/°C from DC to 20 GHz and at operating temperatures from -55 to +85°C.
The flat gain and generous output-power levels of the DC-coupled model EWH2001ZZ distributed PA make it ideal for applications in broadband commercial wireless and optical communications systems as well as in military radar and electronic-warfare systems. It offers outstanding linearity, with an output third-order intercept point (IP3) of typically +33 dBm to 12 GHz and typically +31 dBm to 20 GHz. For applications requiring a wide dynamic range, it can handle high input signal levels to +23 dBm with minimal distortion, and maintains a low noise figure of typically 3.5 dB through 12 GHz and typically 5.0 dB through 20 GHz. The distributed PA produces saturated output power levels of typically +28 dBm to 12 GHz and typically +25 dBm to 20 GHz.
The model EWH2001ZZ incorporates built-in temperature sensing circuitry to monitor device temperature under changing operating conditions. The versatile distributed PA is internally matched to 50 ohms and is unconditionally stable. It has typical input return loss of 15 dB through 12 GHz and 12 dB through 20 GHz, with typical output return loss of 14 dB through 12 GHz and 12 dB through 20 GHz. It operates with typical drain voltages of +7.5 to +8.5 VDC and typical supply current of 270 to 290 mA. The broadband amplifier requires gate voltages of typically -0.55 and +3 VDC, which can be varied to achieve a gain-control range of about 10 dB.
Model EWH2001ZZ is supplied as a RoHS-compliant die measuring 3.12 x 1.63 x 0.1 mm. The MMIC PA is rated for storage temperatures from -65 to +150°C. It is 100% DC and RF tested and visually inspected to MIL-STD-883, Method 2010 requirements. For more information on the model EWH2001ZZ GaAs MMIC distributed PA, and to download datasheets on this amplifier or any of the company's other MMIC and module products, visit www.endwave.com.
Endwave Corporation designs, manufactures and markets RF modules that enable the transmission, reception and processing of high-frequency signals. As one of the largest suppliers of microwave point-to-point radio subsystems, Endwave is experienced in integrated transmit and receive modules that function in the millimeter wave frequency range. Endwave has 42 issued patents covering its core technologies including semiconductor and proprietary circuit designs. Corporate headquarters are located in San Jose, CA, with other operations in Salem, NH; and Chiang Mai, Thailand.