Diodes Incorporated Announces Dual Self-Protected MOSFETs That Offer Complete Protection and Greater Thermal Efficiencies

DALLAS - Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today has introduced dual self-protected low side MOSFETs optimized for use in the harshest electrical environments. These devices provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability. With an Rthj-a rating of 95OC/W, the SM8 packaged devices offer a thermal efficiency that is 30% better than that of alternative SO8 packaged devices, ensuring cooler running. The latest additions to the IntelliFET® product line, the space saving 60V rated N-channel ZXMS6004DT8 and ZXMS6005DT8 integrate over-temperature, over-current, over-voltage and input ESD protection on each of their two independent and isolated switching channels. The MOSFETs handle nominal load currents of 1.2A and 1.8A, respectively, and present on-resistances of only 500m" and 200m". Both devices have an inductive clamping energy rating of 210mJ. Two additional single channel devices have also been announced by Diodes, the ZXMS6005DG and ZXMS6005SG, offering the same level of protection as the duals and providing a cost effective alternative to competing single channel self protected MOSFET solutions. Further information can be found at the Company's website at www.diodes.com. About Diodes Incorporated Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. The Company's corporate headquarters, logistics center, and Americas' sales office are located in Dallas, Texas. Design, marketing, and engineering centers are located in Dallas; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. The Company's wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two manufacturing facilities located in Shanghai, China, another in Neuhaus, and a joint venture facility located in Chengdu, China. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; and Munich, Germany; with support offices located throughout the world. For further information, including SEC filings, visit the Company's website at www.diodes.com. SOURCE: Diodes Incorporated Company Contact:
Diodes Incorporated
Francis Tang, VP,
Worldwide Discrete Products
P: 972-385-2810
E: pressinquiries@diodes.com

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