Press Release Summary:
Supplied in 3 x 3 x 0.85 mm package, 2-bit PE43204 leverages UltraCMOS(TM) and HaRP(TM) technologies to serve 4G Tx/Rx applications. It supports 18 dB attenuation range in 6 and 12 dB steps, protects receive path, and prevents overdriving of ADC. With no gate lag or phase drift, DSA delivers accelerated settling time and Input IP3 greater than +61 dBm at 3 GHz. Typ switching time is 26 nsec, with +0.2 dB attenuation accuracy across DC to 3 GHz operating range.
Original Press Release:
Peregrine Semiconductor Delivers Best-in-Class 2-Bit Digital Step Attenuator for 4G LTE Applications
San Diego, California, September 29, 2009 -- Peregrine Semiconductor Corporation, a leading supplier of high performance RF CMOS and mixed-signal communications ICs, today announced the new PE43204 2-bit UltraCMOS(TM) Digital Step Attenuator (DSA). This newest addition to Peregrine's highly popular DSA portfolio offers best-in-class performance with exceptional attenuation accuracy and linearity, making it ideal for 4G Tx/Rx applications such as cellular base stations and remote radio heads where a DSA is required to adjust the power level. In diversity Rx applications the fast switching PE43204 protects the receive path and prevents overdriving the A/D converter.
The new PE43204 DSA delivers high linearity over temperature and frequency, and is capable of an 18 dB attenuation range in 6 dB and 12dB steps. Additionally, taking advantage of Peregrine's HaRP(TM) technology, the PE43204 demonstrates no gate lag or phase drift, which delivers exceptionally fast settling time and an Input IP3 > +61 dBm at 3GHz. The PE43204 features a typical switching time of 26ns with attenuation accuracy of +0.2dB across a wide operating range of DC - 3GHz. This is a four-fold improvement compared to GaAs-based alternatives, which have switching speeds of up to 130nS.
"Leading LTE equipment manufacturers turned to Peregrine to solve their gain control needs for a high linearity, fast switching and settling time DSA which is critical to protecting the receive path in LTE base stations," said Mark Schrepferman, director of communication and industrial products for Peregrine Semiconductor. "Peregrine's new PE43204 DSA leverages the patented UltraCMOS and HaRP technologies to deliver these benefits for reliable and more accurate performance, while also pushing the limits on integration and low power consumption, making it ideal for manufacturers striving to meet the requirements of the LTE specification."
An additional benefit to next-generation communication systems is low current consumption. The PE43204 DSA is biased from a 3V supply with power supply current of 8µA typical. The device also features parallel control interface programming logic and low insertion loss of 0.6 dB typical. As with all UltraCMOS silicon-on-sapphire RFICs, the new DSA offers exceptional low-frequency performance, superior noise immunity and outstanding ESD tolerance of 2.0 kV HBM.
The PE43204, offered in the ultra-compact 12-lead 3x3x0.85 mm QFN package, is available now in volume priced at $0.70 (50K units). Evaluation kits are available to qualified customers.
About Environmentally-friendly UltraCMOS(TM) Technology
UltraCMOS(TM) mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high-performance wireless applications. Significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount. The Company's revolutionary design inventions, such as HaRP(TM) technology which enables dramatic improvements in harmonic results, linearity and overall RF performance; and DuNE(TM) technology, the industry's most advanced digital tuning capability, are paving the way for unprecedented RF IC development. More importantly, UltraCMOS-based RFICs offer an environmentally friendly option to arsenic-based GaAs ICs which have historically been widely used in RF and wireless systems. With the global move toward 'green engineering' and reduction of hazardous substances (RoHS), UltraCMOS SOS devices are poised to offer engineers and manufacturers alike a simple, responsible solution for the next-generation designs demanded by the environmentally conscious consumer.
About Peregrine Semiconductor
Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets. Manufactured on the Company's proprietary UltraCMOS(TM) mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.
The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.