DC-DC Converters support IGBT, SiC, and MOSFET gate drives.

Press Release Summary:




Available in SIP, DIP, and low-profile surface mount packages, MGJ6 Series provides bipolar voltages required for high-side and low-side IGBT, SiC, and MOSFET gate drive applications. Isolated 6 Watt series comprises combinations of wide input voltages with nominals of 5, 12, or 24 Vdc and +15/-5, +15/-10 or +20/-5 Vdc outputs. With characterized dV/dt immunity of 80 kV/µs minimum at 1.6 kV, converters contribute to high reliability in fast switching drive systems.



Original Press Release:



6 Watt DC-DC Converter Optimized for IGBT, SiC, and MOSFET Gate Drive Applications



Murata has announced an extension to their MGJ6 series of isolated 6 Watt dual output DC-DC converters from Murata Power Solutions. Optimized to suit the bipolar voltages required for high-side and low-side IGBT, SiC, and MOSFET gate drive applications, the MGJ6 series is available now in SIP, DIP, and a low profile surface mount package format. The series comprises combinations of wide input voltages with nominals of 5, 12, or 24 VDC and +15 / -5, +15 / -10 or +20 / -5 VDC outputs. Suitable for low to medium power applications that require a DC link voltage up to 3 kVDC, the asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels. Also, with its very low coupling capacitance, typically 15pF EMI coupling through the converter is reduced.



The MGJ6 series has a characterized dV/dt immunity of 80 kV/us minimum at 1.6 kV, contributing to a high degree of reliability in fast switching drive systems. The series also has characterized partial discharge performance, crucial to achieving a long service life in high-performance applications.



Certification to safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is currently pending. With a creepage and clearance of 8 mm, the MGJ6 will satisfy safety agency requirements for extra-high working voltages.



Short circuit and overload protection features are standard across the range and a frequency synchronization/enable input pin can simplify EMC filter design.



Features


  • Patents Pending


  • No opto feedback


  • Optimized bipolar output voltages for IGBT/SiC & MOSFET gate drives


  • Configurable dual outputs for all gate drive applications: +15V/-5V, +15V/-10V & +20V/-5V outputs


  • Reinforced insulation to UL60950 recognition pending


  • ANSI/AAMI ES60601-1 recognition pending


  • Characterized dv/dt immunity 80kV/µs at 1.6kV


  • Characterized partial discharge performance


  • 5.2kVDC isolation test voltage “Hi Pot Test”


  • Ultra-low coupling capacitance 15pF


  • DC link voltage 3kVDC


  • 5V, 12V & 24V input voltages


  • 105°C operating temperature


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