Daughterboard Evaluation Kits for performance of GaN E-HEMTs.

Press Release Summary:

Used for evaluating GaN E-HEMT performance half-bridge topology circuits, Daughterboard Evaluation Kits works for GS665MB-EVB universal motherboards and custom made system designs. Kits consists of 2 GaN Systems 650 V GaN E-HEMTs with half-bridge gate drivers, isolated power supplies and optional heatsink. Features uniform footprint and form factor, current shunt position for switching test and can be vertically mounted at 35mm height.


Original Press Release:

Richardson RFPD Announces Availability of GaN Systems’ New GaN E-HEMT Evaluation Boards

Universal motherboard and unique daughterboards for evaluation of included GaN E-HEMT performance in any half-bridge topology

Richardson RFPD, Inc. today announced the availability and full design support capabilities for a family of evaluation boards from GaN Systems Inc.

The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topology, either with the GS665MB-EVB universal motherboard or the user’s own system design.

According to GaN Systems, additional key features of the new evaluation boards include:

· Vertical-mount style with height of 35 mm, which fits in the majority of 1U designs and allows evaluation of GaN E-HEMTs in traditional through-hole power supply boards

· Current shunt position for switching characterization testing

· Universal form factor and footprint for all products

The GaN Systems evaluation boards available now from Richardson RFPD are:

Part Number                                               Included GaN E-HEMT                                                        Description                                              GS66504B-EVBDB                                           GS66504B                                             GaN E-HEMT 650 V / 15 A, 100 mΩ           GS66508B-EVBDB                                           GS66508B                                             GaN E-HEMT 650 V / 30 A, 50 mΩ                 GS66508T-EVBDB                                           GS66508T                                             GaN E-HEMT topside cooled 650 V / 30 A, 50 mΩ GS66516T-EVBDB                                           GS66516T                                             GaN E-HEMT topside cooled 650 V / 60 A, 25 mΩ GS665MB-EVB                                                         -                                                     Universal 650 V Motherboard

To find more information, or to purchase these products today online, please use the preceding links to visit the Richardson RFPD website. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about GaN Systems, please visit the GaN Systems storefront webpage.

About Richardson RFPD

Richardson RFPD, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. More information is available at the GaN Systems storefront webpage.

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Elizabeth Whelan

Marketing Specialist

Richardson RFPD

1950 S. Batavia Ave Suite 100 Geneva, IL 60134

P 630.262.6867

M 630.488.6184

ewhelan@richardsonrfpd.com

richardsonrfpd.com

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