Cree Demonstrates 400 Watts of RF Power for GaN S-Band Transistor


DURHAM, NC, JUNE 13, 2006 - Cree, Inc. (NASDAQ: CREE) announced today that it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400 watts of peak pulsed RF power at 3.3 GHz with 10.6 dB of associated power gain and 62-percent drain efficiency when operated at 40 volts.

"We are pleased to announce that we have achieved this 400-watt milestone. To our knowledge, this is the highest output power publicly reported for a single packaged GaN transistor in this frequency range," said Jim Milligan, Cree's product manager for wide bandgap radio frequency products. "Upcoming mobile WiMAX applications are expected to require average orthogonal frequency-division multiplexing (OFDM) output power between 10 and 25 watts with peak-to-average ratios (PAR) as high as 12 dB. This will require transistors that are capable of delivering up to 400 watts of peak RF output power."

Cree is demonstrating operation of this new transistor this week at Booth 1143 at the IEEE MTT-S International Microwave Symposium 2006, being held June 13-15 in San Francisco.

Initial transistor sampling is targeted for later this year. Additional information about Cree RF products may be obtained by calling Cree at 919-287-7505 or by visiting www.cree.com.

About WiMAX
WiMAX is a standards-based wireless technology that provides high-throughput connections over long distances. It can be used for multiple applications, including last-mile broadband access, hotspots, cellular backhaul, high-speed enterprise connectivity, and non-line-of-sight mobile connectivity.

About Cree, Inc.
Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency.

Key to Cree's market advantage is its world-class materials expertise in SiC and GaN for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products. Cree drives its increased performance technology into multiple applications including exciting alternatives in brighter and more tunable light for general illumination, backlighting for more vivid displays, optimized power management for high-current switch-mode power supplies and variable-speed motors, and more effective wireless infrastructure for data and voice communications.

Cree customers range from innovative lighting fixtures makers to defense-related federal agencies. Cree's product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio-frequency/wireless devices. For product specifications please refer to www.cree.com.

Contact: Deb Lovig
Marketing Communications Manager
Cree, Inc.
Deb_Lovig@cree.com
Ph: (919) 287-7505
Fax: (919) 313-5615

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