Compact P-Channel MOSFETs offer low on-resistance.

Press Release Summary:

TrenchFET® Gen III p-channel power MOSFETs include -12 SiA467EDJ and -20 V with respective on-resistance down to 13 and 14.5 mΩ (-4.5 V gate drive) as well as -30 V SiA449DJ and SiA483DJ with respective on-resistance to 20 and 21 mΩ (-10 V gate drive). Models SiA437DJ and SiA467EDJ also feature 30 A current rating for load switch applications with large inrush currents. Designed for use in portable electronics, these products come in 2 x 2 mm PowerPAK® SC-70 package.


Original Press Release:

Vishay Releases Gen III P-Channel MOSFETs with Industry-Low On-Resistance in 2 mm Sq Package

Vishay Intertechnology Releases -12 V, -20 V, and -30 V Gen III P-Channel MOSFETs With Industry-Low On-Resistance in the 2 mm by 2 mm PowerPAK® SC-70 Package

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today extended its offering of TrenchFET® Gen III p-channel power MOSFETs in the ultra-compact PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs released today offer the industry's lowest on-resistance for -12 V, -20 V, and -30 V (12 V VGS and 20 V VGS) devices at -4.5 V and -10 V gate drives in the 2 mm by 2 mm footprint area.

For load and battery switches in power management and control switches in synchronous buck converter applications for smartphones, tablet PCs, mobile computing devices, hard disk drives, and solid state drives, the -12 V SiA467EDJ offers an extremely low on-resistance down to 13 mΩ (-4.5 V). The -20 V SiA437DJ features values down to 14.5 mΩ (-4.5 V), and the -30 V SiA449DJ, and SiA483DJ provide low on-resistance to 20 mΩ (-10 V) and 21 mΩ (-10 V), respectively. In addition, the SiA437DJ and SiA467EDJ feature a high 30 A current rating for load switch applications with big inrush currents.

The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while their ultra-compact PowerPAK SC-70 package saves critical PCB space. For small point-of-load (POL) DC/DC and other synchronous buck applications, the MOSFETs' p-channel technology simplifies gate drive designs by eliminating the need for level-shifting circuitry or "bootstrap" devices.

The SiA467EDJ, SiA437DJ, SiA449DJ, and SiA483DJ are 100 % Rg-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.

Device Specification Table:


Part #VDS (V)VGS (V)RDS(ON) (mΩ) @-10 V-4.5 V-2.5 V-1.8 V-1.5 VSiA467EDJ-128-1319.540-SiA437DJ-208-14.520.533.065.0SiA449DJ-3012202438--SiA483DJ-30202130---


Samples and production quantities of the SiA467EDJ, SiA437DJ, SiA449DJ, and SiA483DJ are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery only starts at $0.15 per piece in 100,000-piece quantities.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

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