CD Metrology System aids 90 and 65 nm IC manufacturing.

Press Release Summary:



SpectraCD-XT provides inline CD and profile measurements of critical device structures that help enable early prediction of IC performance and yield at 90 and 65 nm nodes. Suited for high-volume IC manufacturers, this spectroscopic ellipsometry-based CD metrology tool features sub-2 sec move-acquire-measure time and throughput rated up to 100+ wph. Optics use oblique illumination, enabling identification of structural anomalies such as notching and footing of gate profiles.



Original Press Release:



KLA-Tencor's SpectraCD-XT Significantly Reduces Cost-of-Ownership of CD Metrology for 90-nm and 65-nm IC Manufacturing



SAN JOSE, Calif., Feb. 8 -- KLA-Tencor (NASDAQ:KLAC) today introduced its latest-generation optical CD metrology system, the SpectraCD-XT, which provides cost-effective inline CD and profile measurements of critical device structures that help enable early prediction of IC performance and yield at the 90-nm and 65-nm nodes. The only high-performance spectroscopic ellipsometry (SE)-based CD metrology tool with sub-two-second move-acquire-measure (MAM) time, SpectraCD-XT provides a two-fold increase in throughput (to more than 100 wph) compared to KLA-Tencor's previous-generation platform at comparable performance. This enables chipmakers to meet their increased sampling requirements at the lowest cost-per-yield-relevant measurement. SpectraCD-XT is built on a production-proven platform used by 9 out of the top 10 chipmakers. The tool is an ideal CD control solution for high-volume IC manufacturers, where high productivity and low cost-of-ownership (CoO) are essential.

Chipmakers face shrinking process windows and tighter process tolerances as they scale to smaller design rules. As a result, minute lithography process variations can significantly impact device performance and functional yields. This drives the need for increased measurement sampling early in the manufacturing cycle with minimal impact to fab productivity. In addition to requiring standard CD linewidth information, increasing hidden systematic errors in lithography today mandate the need for 3D profile information on device structures, including sidewall angle, and top and bottom CD, to obtain yield-relevant data that provides better correlation to back-end-of-line (BEOL) device performance tests.

"In wafer patterning, the quality of gate and STI structures is a key contributor to the maximum performance potential of semiconductor devices," stated Avi Cohen, group vice president of the Parametric Solutions Group at KLA-Tencor. "Our customers want careful monitoring and control over these structures to ensure that products at end-of-line test meet required performance specifications. In a high-volume manufacturing environment, however, the last thing you need is for metrology to be a bottleneck on fab productivity. We are pleased that multiple customers have selected KLA-Tencor's SpectraCD-XT optical CD metrology system due to its ability to cost-effectively provide CD and critical profile information at high throughputs, allowing them to meet their high-volume production requirements."

Meets Precision Requirements for Critical Transistor Applications

SpectraCD-XT with SE technology offers leading precision on advanced applications where device structures are highly complex and require multiple types of measurements, such as shallow trench isolation (STI), gate and spacer. Unlike reflectometry-based metrology systems, which provide near-normal incidence (top-down) illumination, KLA-Tencor's SE optics uses oblique illumination to enable the identification of smaller structural anomalies-such as notching and footing of gate profiles-that more accurately correlate to end-of-line device performance and yield. Emerging optical CD metrology applications include: contact holes; BEOL trenches and vias; and scanner qualification, where the SpectraCD-XT's sub-two-second MAM time makes it an ideal solution for measuring the tens of thousands of points per wafer needed to characterize cross-field and cross-wafer CD uniformity.

Meets Production Requirements for High-volume Fabs

As CD process control budgets shrink, tool matching has become increasingly critical for device manufacturability. The SpectraCD-XT offers excellent matching performance, both tool-to-tool and with KLA-Tencor's integrated CD module, enabling chipmakers to implement a comprehensive fab-wide CD control strategy. Improved model setup and analysis tools embedded on the SpectraCD-XT speeds library generation by 30 to 60x-providing significant savings in time and engineering resources, which in turn, help enable faster yield learning on new technologies. The system is also built on a platform with proven reliability in high-volume production.

KLA-Tencor will showcase its latest yield management and process control products, including the SpectraCD-XT, at SPIE Microlithography 2006 (Booth 1013) from Feb. 21 to Feb. 22 at the San Jose Convention Center in San Jose, Calif.

The SpectraCD-XT is available now.

About KLA-Tencor: KLA-Tencor is the world leader in yield management and process control solutions for semiconductor manufacturing and related industries. Headquartered in San Jose, Calif., the company has sales and service offices around the world. An S&P 500 company, KLA-Tencor is traded on the Nasdaq National Market under the symbol KLAC. Additional information about the company is available on the Internet at www.kla-tencor.com/ .

CONTACT: Uma Subramaniam, Director, Corporate Communications, of KLA-Tencor, +1-408-875-5473, or uma.subramaniam@kla-tencor.com

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