Press Release Summary:
Models D10040200PL1 and D10040230PL1 are GaN based hybrid power doubler amplifiers designed to provide final amplifier stage for CATV trunk amplifiers, line extenders, and optical nodes. Units operate from 45-1,000 MHz and feature current consumption of 24 V, 380 mA. They offer high output and optimal linearity/return loss performance with low noise. Modules utilize GaAs pHEMT and GaN HEMT die.
Original Press Release:
RFMD® Releases Industry's First 'Green' GaN CATV Amplifier Module Portfolio
Innovative GaN Amplifiers Deliver Industry's Best Low Current Performance
DENVER, COLORADO - October 27, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today released the industry's first "green" gallium nitride (GaN) based CATV amplifier modules. The D10040200PL1 and D10040230PL1 are designed for use as power doubler amplifiers in current and next generation CATV infrastructure applications.
The D10040200PL1 and D10040230PL1 are hybrid power doubler amplifier modules designed to provide the final amplifier stage for CATV trunk amplifiers, line extenders, and optical nodes. The parts employ GaAs pHEMT and GaN HEMT die and operate from 45 MHz to 1000 MHz. They provide high output capability, excellent linearity and superior return loss performance with low noise and optimal reliability. With low current and extremely low distortion, the D10040200PL1 and D10040230PL1 are unconditionally stable under all terminations.
The performance of this new family of CATV amplifiers is on par with other industry-leading GaAs CATV Power Doublers, also supplied by RFMD, but with 20% lower current consumption (24V/380mA). With these "green" energy-saving benefits, these products enable designers to fulfill growing requirements for lower energy consumption and assist network operators in their drive to reduce the overall cost of operating CATV networks. The D10040200PL1 and D10040230PL1 are the best performing low-current CATV power doubler amplifiers on the market today.
Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), said, "Network operators worldwide are increasingly focused on reducing the energy costs of operating their wireless and wireline networks. RFMD's high-performance GaN technology satisfies the industry's drive for "green technology" by enabling advanced RF components and products that provide industry-leading power and operate at significantly lower power consumption levels."
RFMD leads the world in III-V semiconductor technology innovation and was first to introduce GaN CATV amplifier modules, with the launch of the D10040200PH1 and D10040230PH1 high output GaN power doubler CATV amplifier modules in June 2008.
Production quantities of D10040200PL1 and D10040230PL1 are available immediately.
RFMD is exhibiting at the SCTE Cable-Tec Expo '09, October 28 - 30, in Denver, CO.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.