C-Band GaAs FETs suit satellite and radar applications.
Press Release Summary:
Offering 48.0 dBm typ output power, TIM6472-60SL and TIM7179-60SL are 60 W C-band gallium arsenide field effect transistors (GaAs FETs) with respective frequency ranges of 6.4-7.2 GHz and 7.1-7.9 GHz. They are suited for use in Solid State Power Amplifiers (SSPAs) for communications applications primarily supported by TWTAs. Also available, TIM5359-80SL is 80 W GaAs FET with 49.0 dBm typ output power. All 10 V models come in 24.5 x 17.4 x 5.5 mm packages.
Original Press Release:
Toshiba Expands High Power C-Band GaAs FET Product Line to Provide New SSPA Market Opportunities for Satellite Communications
New Devices Are the First in the 6.4 to 7.2GHz, 7.1 to 7.9HGz and 5.3 to 5.9GHz Frequency Ranges and Offer the Highest Output Power Currently Available
SAN FRANCISCO, IEEE MTT-S Booth #1046, June 13 -- Committed to giving its customers the broadest range of leading-edge microwave products, Toshiba America Electronic Components, Inc. (TAEC)* today announced the availability of new C-Band gallium arsenide field effect transistors (GaAs FETs) that are the industry's first in each frequency range, and have the highest output power now available from a single device for that range. TAEC will be displaying its new C-Band GaAs FETs, along with other new microwave devices, in Booth #1046 at this year's IEEE MTT-S International Microwave Symposium, held June 13 through 15 in San Francisco.
These new devices, developed by Toshiba Corp. (Toshiba), expand Toshiba's 60W line-up that currently features parts in other C-band frequency ranges. Designated TIM6472-60SL and TIM7179-60SL, they feature an output power of 48.0dBm (typical) and were developed for use in Solid State Power Amplifiers (SSPAs) for satellite communication and radar applications that are primarily supported by Traveling Wave Tube Amplifiers (TWTAs). In addition, Toshiba also added a new High Power GaAs FET, designated TIM5359-80SL, to its 80W line-up, which features an output power of 49.0dBm (typical).
Higher power SSPAs are in demand for both commercial and government satellite communications systems for a wide range of applications including global telecommunications, weather monitoring, airport traffic controlling, as well as defense and homeland security applications.
"Toshiba is the first to offer additional frequencies for the 60W and 80W C-band GaAs FET, which means our customers can find expanded market opportunities in the new frequency range," said Christine Lee, business development manager for Microwave Devices at TAEC. "Coupled with our ability to provide the highest output power, Toshiba has a leading solution for next- generation SSPAs and microwave radars."
To simplify re-design, Toshiba maintained the footprint of new FETs. The 10V GaAs FET for 60W and 80W are offered in packages measuring 24.5mm x 17.4mm x 5.5mm.
Each of the new Power GaAs FETs are implemented in Toshiba's Heterojunction Field Effect Transition (HFET) process technology and employ Toshiba's cutting-edge ion implantation technology to enable development of the higher output FETs. The HFET process is ideal for high power microwave devices because of its high carrier concentration that enhances output power and gain. Toshiba plans to use this HFET process to develop additional 60W and higher output power devices for other C-band frequency ranges as market conditions warrant.
Toshiba is an industry leader in microwave devices, with a history of industry achievements in output power, small size and performance. The company's family of C-Band components provides state-of-the-art power and efficiency for satellite communication applications, with a broad selection of Power GaAs FET products. The products are single-ended devices featuring high linearity, Class A operation and are hermetically sealed for high reliability.
60W/80W C-Band Power GaAs FET Product Specifications
Part Number TIM6472-60SL TIM7179-60SL TIM5359-80SL
Frequency 6.4 - 7.2 GHz 7.1 - 7.9 GHz 5.3 - 5.9 GHz
Output Power (P1dB) 48 dBm (typ.) 48 dBm (typ.) 48 dBm (typ.)
Gain (G1dB) 9.5 dB (typ.) 9.5 dB (typ.) 8.5 dBm (typ.)
Drain Voltage 10V 10V 10V
Drain Current (Ids)(typ) 13.2A (typ.) 13.2A (typ.) 18.0A (typ.)
Pricing and Availability
Engineering samples of the TIM6472/7179-60SL 60W C-Band GaAs FET will be available in 3Q06 and samples of the TIM5359-80SL 80W C-band GaAs FET will be available in 4Q06, with prices beginning at $1,000 and $1,200 respectively.
About Solid State Power Amplifiers
Solid-state power amplifiers are an alternative to vacuum-tube technology for generating high power at microwave frequencies. Solid-state circuitry has been steadily replacing vacuum-tube technology for decades but one of the few applications that had resisted change was generation of high power in satellite earth station applications. With recent advances in solid-state microwave power devices, SSPAs now offer superior intermodulation characteristics, lower power consumption, lower operating costs, and longer life than traveling-wave tube amplifiers.
TAEC Microwave Devices Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution system (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems.
About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's second largest semiconductor manufacturer and the world's ninth largest integrated manufacturer of electric and electronic equipment. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
All trademarks and tradenames held within are the properties of their respective holders.
CONTACT: Jan Johnson of MultiPath Communications International, Inc., +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; or Poloi Lin of Toshiba America Electronic Components, Inc., +1-949-623-3098, poloi.lin@taec.toshiba.com
