C-Band GaAs FETs suit microwave radios/power amplifiers.
Press Release Summary:
High-performance EL series products include TIM6472-16EL that operates in 6.4-7.2 GHz range with power gain at 1 dB gain compression point (G1dB) of 11.0 dB typical. Model TIM7179-16EL operates from 7.1-7.9 GHz with G1dB of 10.5 dB, while TIM7785-16EL, operating in 7.7-8.5 GHz range, has G1dB of 10.0 dB. All 3 units feature output power of 1 dB gain compression point (P1dB) of 42.5 dBm. When combined with 4 W MMIC, systems offer 2-chip solution for microwave radio design.
Original Press Release:
Toshiba Expands C-BAND GAAS FETS Lineup with Three Power Amplifiers Optimized for High Gain
o High Gain Lineup Includes Three 16W GaAs Amplifiers with Power Added Efficiency and Increased Gain for Microwave Radios and SSPAs
o With new 4W MMIC, Creates Two-Chip Microwave Radio Amplifier
TAEC in IEEE MTT-S Booth # 813
ANAHEIM, Calif. - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new "EL" series of high performance C-Band devices optimized for both high gain and power added efficiency. The "EL" high gain GaAs FETs are targeted for microwave radios and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, May 25 - 27 in Anaheim, California.
"Toshiba's new EL series offers the highest level of performance of our three series of C-Band GaAs FETs, with both high power added efficiency and high gain," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit. We also offer a "UL" series with medium power added efficiency and gain, and the "SL" series, the standard performance level for this wavelength."
"With these high gain FETs and a newly developed 4-Watt (W) monolithic microwave integrated circuit (MMIC), also introduced during this exhibition, we offer a two-chip solution for microwave radio design. It eliminates the requirement for a mid-stage 4W discrete FET typically used in existing three-chip solutions, improves design flexibility, and saves board space and cost by reducing part count.
The first three devices in the "EL" series are 16W GaAs FETS targeted for three different C-Band frequency ranges. The TIM6472-16EL operates in the 6.4 gigahertz (GHz) to 7.2 GHz range, with output power of 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 11.0 dB (typ.) and power added efficiency of 37 percent. Compared to the similarly rated 16W device in the SL series, TIM6472-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM6472-16UL.
The second new device, TIM7179-16EL operates in the 7.1GHz to 7.9 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.5 dB (typ.) and power added efficiency of 37 percent. Compared to the similarly rated 16W device in the SL series, TIM7179-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 2.0dB compared to the similarly rated 16W UL device, TIM7179-16 UL.
The TIM7785-16EL operates in the 7.7GHz to 8.5 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.0 dB (typ.) and power added efficiency of 36 percent. Compared to the similarly rated 16W device in the SL series, TIM7785-16SL, it offers a 4.5dB increase in gain, and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM7785-16UL.
Pricing and Availability
Samples of the Toshiba Power Added Efficiency GaAS FET family are available now. For pricing, please contact your Toshiba representative.
Technical Specifications 50W TGI7785-50L GaN HEMT
Product Characteristics TIM6472-16E L TIM7179 - 16E L TIM7785 - 16E L
Frequency 6.4 - 7.2 GHz 7.1 - 7.9 GH 7.7 - 8.5 GHz
Band C-Band C-Band C-Band
Output Power, P1dB (typ.) 42.5dBm 42.5dBm 42.5dBm
Power Gain, G1dB (typ.) 11.0dB 10.5dB 10.0dB
Power Added Efficiency, çadd 37% 36% 36%
Bias conditions: V DS =10V, I DS set = 2.8A
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include FWA/BWA systems such as WiMAX, point-to-point (PTP) or point-to-multi-point (PTMP) terrestrial microwave radio links, satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems and other industrial uses. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial PTP or PTMP communications, radar systems and other industrial uses.
About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2009 WW Semiconductor Revenue, Dec. 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.
