Avalanche Photodiode operates at 3.5 GHz.
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Press Release Summary:
Featuring 30 µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in range-finding, optical time-domain reflectometers, and high-sensitivity line receivers.
Original Press Release:
OSI LASER DIODE Introduces Low-Noise, High-Sensitivity, High-Speed, 30 µm InGaAs Avalanche Photodiode
Edison, NJ – OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the latest detector in the avalanche photodiode (APD) family, the LAPD 1550-30R. The low-noise, high-sensitivity, 30 µm indium gallium arsenide (InGaAs) mesa structure joins the company’s 75 and 200 µm APD series. The high speed LAPD 1550-30R operates at 3.5 GHz and features a broad voltage breakdown (Vbr) curve of 30 V (minimum) to 40 V (maximum) with a typical response of 37 volts.
Ideal for applications in range-finding, optical time-domain reflectometers (OTDRs), and high-sensitivity line receivers, the LAPD 1550-30R is housed in a hermetically-sealed 3-pin, TO46 package with a lens cap. OSI Laser Diode’s low noise, 30 micron InGaAs APD module is RoHS compliant and operates from 1260 nm to 1650 nm with a typical operational wavelength at 1550 nm. The operating temperature ranges from -40 degrees to 85 degrees C, with a non-operating, storage temperature range from -40 degrees to 100 degrees C.
For more information about OSI Laser Diode’s LAPD 1550-30R for advanced detection applications, please visit www.laserdiode.com.Â
About the Company:Â OSI Laser Diode, Inc. (LDI), founded in 1967, is a global leader in laser diode technology, providing advanced optoelectronic products that serve the military/aerospace, telecom/datacom (short and long haul), commercial, industrial, and medical markets.
