Press Release Summary:
Model VEMD25x0X01 high-speed silicon PIN photodiodes offer 12 ÂµA light current and spectral sensitivity range of 350-1,120 nm, while VEMT25x0X01 NPN planar phototransistors offer light current of 6 mA and spectral sensitivity from 470-1,090 nm. Sensitive to visible and NIR radiation, both photo detectors feature 1 nA dark current, Â±15Â° angle of half sensitivity, and temperature range of -40 to +100Â°C. They are available in 1.8 mm gullwing and reverse gullwing SMT packages.
Original Press Release:
Vishay's New Automotive-Qualified PIN Photodiodes and NPN Planar Phototransistors Offer Spectral Bandwidth from 350-1,120 nm or 470-1,090 nm in 1.8-mm Gullwing and Reverse Gullwing Packages
Devices Feature Compact Footprint of 2.3 mm by 2.3 mm by 2.8 mm; Offer Sensitivity to Visible and Near Infrared Radiation
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) has broadened its optoelectronics portfolio with the introduction of the new AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors. Available in 1.8-mm gullwing and reverse gullwing surface-mount packages, the photo detectors are sensitive to visible and near infrared radiation and offer a compact footprint of 2.3 mm by 2.3 mm by 2.8 mm.
The devices released today are optimized for light curtains, miniature switches, encoders, and photo-interrupters in metering, automotive, and printer applications; and detectors for visible and infrared emitter sources in proximity applications.
The photodiodes offer a 12-µA light current and spectral sensitivity range of 350 nm to 1120 nm, while the phototransistors offer a light current of 6 mA and spectral sensitivity range of 470 nm to 1090 nm. The VEMD25x0X01 and VEMT25x0X01 devices feature a 1-nA dark current, ± 15° angle of half sensitivity, temperature range of - 40 °C to + 100 °C, and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01.
While most photo detectors only feature a moisture sensitivity level (MSL) of 3 and must be mounted within 72 hours of being unsealed or removed from protective packing, the VEMD25x0X01 and VEMT25x0X01 devices can remain on the plant floor for up to four weeks, thanks to their MSL of 2a, per J-STD-020. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, are halogen- free according to the IEC 61249-2-21 definition, and are compatible with lead (Pb)-free reflow solder assembly.
Device Specification Table:
Part number Type Package Spectral bandwidth (nm) Wavelength of peak sensitivity Light current, typ.
VEMT2500X01 Phototransistor Reverse Gullwing 470 to 1090 850 nm 6 mA
VEMT2520X01 Phototransistor Gullwing 470 to 1090 850 nm 6 mA
VEMD2500X01 Photodiode Reverse Gullwing 350 to 1120 900 nm 0.012 mA
VEMD2520X01 Photodiode Gullwing 350 to 1120 900 nm 0.012 mA
Samples and production quantities of the new photodiodes and phototransistors are available now, with lead times of four to six weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.