Toshiba Expands High-Efficiency UMOS V-H MOSBD Lineup for DC-DC Converter 'FETKEY' Applications
Five New 30V Single Die MOSFET and Schottky Barrier Diode Devices for DC-DC Conversion Increase Efficiency and Save Board Space Compared to Discrete Components
IRVINE, Calif., Oct. 28 -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, announced today that it has expanded its lineup of high-efficiency MOSBD devices, which are also known in the industry as "FETKEYs." The devices integrate a power MOSFET and a Schottky Barrier Diode onto a single die to save board space, increase power efficiency and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode. The five new high-efficiency MOSBDs, developed by Toshiba Corp., expand the selection of available packages, as well as a range of drain current and on-state resistance (R(DS(ON))) ratings.
The five new devices, TPC8A04-H, TPC8A05-H, TPCA8A04-H, TPCA8A05-H and TPCM8A05-H are targeted for high-efficiency DC-DC converter applications in notebook PCs, portable devices and other electronics that require efficient power management. These MOSBDs are based on UMOS V-H, the fifth-generation process technology in the Toshiba fast switching series, which enables a lower figure of merit, R(DS(ON)) x Q(gd) (1). Each of the MOSBDs utilizes Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce R(DS(ON))
"These additional UMOS V-H MOSBDs, or "FETKEYs", which integrate a MOSFET and Schottky Barrier Diode into a single die to improve electrical characteristics, demonstrate how Toshiba continues to look for innovative integration of power devices and packaging designs to support our customers' efforts to reduce circuit board size," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC. "The five new FETKEYs provide a broader selection of drain current, R(DS(ON)) and packages to meet a range of system design requirements."
All five devices feature 30V drain source voltage (max.) Two of the devices, the TPC8A04-H and TPC8A05-H, are offered in SOP-8 packaging, which measures 5mm x 6mm x 1.6mm. The TPC8A04-H has a drain current rating of 18A (max.) and R(DS(ON)) of 2.6 milliohm (typ.) (2), while the TPC8A05-H has a drain current rating of 10A (max.) and R(DS(ON)) of 9.5 milliohm (typ.) (2).
The TPCA8A04-H and TPCA8A05-H are offered in low-profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm. The TPCA8A04-H has a drain current rating of 42A (max.) and R(DS(ON)) of 2.3 milliohm (typ.) (2), and the TPCA8A05-H has drain current of 20A (max.) and R(DS(ON)) of 9.2 milliohm (typ.) (2).
The fifth device, TPCM8A05-H, is offered in compact TSSOP Advance packaging, which measures 3.5mm x 4.65mm x 0.75mm. The device has a drain current rating of 20A (max.) with R(DS(ON)) of 9.2 milliohm (typ.) (2).
Pricing and Availability
Samples of the Toshiba TPC8A04-H, TPC8A05-H, TPCA8A04-H, TPCA8A05-H and TPCM8A05-H high-efficiency UMOS V-H MOSBD are available now, with prices in sample quantities starting at $0.86.
Technical Specifications
Product Maximum Maximum R(DS (ON)) R(DS (ON)) R(DS (ON)) R(DS (ON))
Number V(DSS) I(D) Typ.@V(GS) Typ.@V(GS) Max.@V(GS) Max.@V(GS)
= 4.5V = 10.0V = 4.5V = 10.0V
TPC8A04-H 30V 18A 3.2mohm 2.6mohm 4.5mohm 3.6mohm
TPC8A05-H 30V 10A 12.6mohm 9.5mohm 17.6mohm 13.3mohm
TPCA8A04-H 30V 42A 2.9mohm 2.3mohm 4.1mohm 3.2mohm
TPCA8A05-H 30V 20A 12.3mohm 9.2mohm 17.2mohm 12.9mohm
TPCM8A05-H 30V 20A 12.3mohm 9.2mohm 17.2mohm 12.9mohm
Technical Specifications (cont.)
Product Crss Ciss Package
Number V(DS)=10V, V(DS)=10V,
V(GS)=0V, V(GS)=0V,
f=1MHz f=1MHz
TPC8A04-H 180(pF) 4400(pF) SOP-8 (5mm x 6mm x 1.6mm)
TPC8A05-H 55(pF) 1300(pF) SOP-8 (5mm x 6mm x 1.6mm)
TPCA8A04-H 180(pF) 4400(pF) SOP Advance (5mm x 6mm x 0.95mm)
TPCA8A05-H 55(pF) 1300(pF) SOP Advance (5mm x 6mm x 0.95mm)
TPCM8A05-H 55(pF) 1300(pF) TSSOP Advance (3.5mm x 4.65mm x
0.75mm)
Toshiba's Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "2007 Worldwide Semiconductor Market Share Report," Gartner, released April 2008). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, photocouplers, TOSLINKs, LEDs, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About TAEC and Toshiba Corp.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue, April 2008). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com/, or from your TAEC representative.
(1) The product of on-state resistance and gate charge. The smaller this value is, the better the performance of the MOSFET.
(2) At VGS =4.5V
Source: Toshiba America Electronic Components, Inc.
CONTACT:
Poloi Lin of Toshiba America Electronic Components, Inc.,
+1-949-623-3098,
poloi.lin@taec.toshiba.com
Web site: http://www.toshiba.com/taec
http://www.chips.toshiba.com/
