High Power, High Gain Devices Include Toshiba's First Production C-Band GaN Amplifier for SATCOM, an Extended Ku-Band Amplifier and an X-Band Amplifier for Industrial Applications
IRVINE, Calif., June 9 / / - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the addition of three new gallium nitride (GaN) semiconductor High Electron Mobility Transistors (HEMTs) to its power amplifier product family, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.
Toshiba's first commercial C-band GaN HEMT for satellite communication applications, the TGI7785-120L, operates in the 7.7GHz(1) to 8.5GHz range with output power of 120W. The device features output power of 51.0dBm (typ.) with 44dBm input power, linear gain of 11.0dB(2) (typ.) and drain current of 10.0 Amps(2) (typ.). This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for SATCOM applications.
"We believe this is the highest output power internally matched GaN HEMT in this band that is commercially available," said Homayoun Ghani, business development manager, Microwave, RF and Small Signal Devices, in TAEC's Discrete Business Unit. "Its 120W output power is nowhere near the limit of GaN technology, as we expect to be able to double or even quadruple this output power in the future."
Toshiba is also unveiling another GaN HEMT for satellite communication applications, the extended Ku-Band TGI1314-50L, which operates in the 13.75GHz to 14.5GHz range with output power of 50W. The device features output power of 47.0dBm (typ.) with 42dBm input power, linear gain of 8.0dB (typ.) and drain current of 5.0 Amps (typ.). Targeted applications are SATCOM applications such as high power solid-state power amplifiers (SSPA) and block up converters (BUC) for very small aperture terminals (VSAT).
Toshiba's X-Band TGI1011-50-771 operates in the 11.3GHz to 11.5GHz range with output power of 50W. It features output power of 47.0dBm (typ.)(2) with 41dBm input power, linear gain of 9.0dB(2) (typ.) and drain current of 5.0 Amps(2) (typ.). Targeted industrial applications include exciters for particle accelerators.
"Toshiba's first commercial GaN power amplifier has been in volume production since 2008 and this technology presents superior device performance such as high gain and efficiency in SATCOM and RADAR market. Toshiba is exploring new markets for this technology. Exciters for particle accelerators are a good example of non-telecommunication and non-radiolocation applications for these power amplifiers," said Ghani. "Toshiba will continue its efforts to develop additional GaN devices in other bands with higher output power."
In 2008, Toshiba announced the Ku-band TGI1414-50L in its GaN power amplifier family, which operates in the 14.0GHz to 14.5GHz range for satellite communication applications. It is now in mass production.
Pricing and Availability
Samples of the TGI7785-120L are available now, with mass production scheduled for third quarter, 2009. Sample of the TGI1314-50L and TGI1011-50-771 will be available now. For pricing, please contact your Toshiba representative.
Characteristics TGI7785-120L TGI1314-50L TGI1011-50-771
Frequency 7.7 - 8.5GHz 13.75 - 14.5GHz 11.3 - 11.5GHz
Band C Band Extended Ku-Band X-band
Pout(typ.) 51.0dBm 47.0dBm 47.0dBm
GL(typ.) 11.0dB 8.0dB 9.0dB
Drain Current, +24V/10A +24V/5A +24V/5A
Efficiency 42% 29% 30%
Package 7- AA06A 7- AA04A 7- AA04A
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue, April 2008). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com, or from your TAEC representative.
(1)For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
(2)with a supply voltage of 24V at 25 degrees Celsius
Source: Toshiba America Electronic Components, Inc.
CONTACT: Company, Rebecca Bueno, Toshiba America Electronic Components, Inc., +1-949-623-3099, firstname.lastname@example.org
Web Site: http://www.toshiba.com/taec